Correlation between Microwave Reflectivity and Excess Carrier Concentrations in 4H-SiC

Masashi Kato; Yuto Mori; Masaya Ichimura

doi:10.4028/www.scientific.net/MSF.778-780.293

Paper Titles

Identification of Structures of the Deep Levels in 4H-SiC
p.277

Oxidation Induced ON₁, ON_2a/b Defects in 4H-SiC Characterized by DLTS
p.281

Identification of the Negative Carbon Vacancy at Quasi-Cubic Site in 4H-SiC by EPR and Theoretical Calculations
p.285

Defect Levels in High Purity Semi-Insulating 4H-SiC Studied by Alpha Particle Induced Charge Transient Spectroscopy
p.289

Correlation between Microwave Reflectivity and Excess Carrier Concentrations in 4H-SiC
p.293

Diffusion of Alkali Metals in SiC
p.297

Comparison of Carrier Lifetime Measurements and Mapping in 4H SiC Using Time Resolved Photoluminscence and μ-PCD
p.301

On Photoelectrical Properties of 6H-SiC Bulk Crystals PVT-Grown on 6H- and 4H-SiC Substrates
p.305

Basal Plane Dislocations from Inclusions in 4H-SiC Epitaxy
p.309

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Correlation between Microwave Reflectivity and Excess Carrier Concentrations in 4H-SiC

Abstract:

Carrier lifetime in a high injection condition is a key parameter for design of bipolar devices. Microwave photoconductivity decay (μ-PCD) is a popular method to evaluate the carrier lifetime in silicon carbide (SiC). For accurate evaluation of the carrier lifetime by μ-PCD measurements, the microwave reflectivity needs to be proportional to the excess carrier concentration. In this study, we observed microwave reflectivity from 4H-SiC as a function of injected photon density and suggested a method to keep proportionality of the reflectivity to the excess carrier concentration.