Comparison of Carrier Lifetime Measurements and Mapping in 4H SiC Using Time Resolved Photoluminscence and μ-PCD

Birgit Kallinger; Mathias Rommel; Louise Lilja; Jawad Hassan; Ian D. Booker; Erik Janzén; J. Peder Bergman

doi:10.4028/www.scientific.net/MSF.778-780.301

Paper Titles

Identification of the Negative Carbon Vacancy at Quasi-Cubic Site in 4H-SiC by EPR and Theoretical Calculations
p.285

Defect Levels in High Purity Semi-Insulating 4H-SiC Studied by Alpha Particle Induced Charge Transient Spectroscopy
p.289

Correlation between Microwave Reflectivity and Excess Carrier Concentrations in 4H-SiC
p.293

Diffusion of Alkali Metals in SiC
p.297

Comparison of Carrier Lifetime Measurements and Mapping in 4H SiC Using Time Resolved Photoluminscence and μ-PCD
p.301

On Photoelectrical Properties of 6H-SiC Bulk Crystals PVT-Grown on 6H- and 4H-SiC Substrates
p.305

Basal Plane Dislocations from Inclusions in 4H-SiC Epitaxy
p.309

Photoluminescence Imaging and Discrimination of Threading Dislocations in 4H-SiC Epilayers
p.313

Polarized Photoluminescence from Partial Dislocations in 4H-SiC
p.319

HomeMaterials Science ForumMaterials Science Forum Vols. 778-780Comparison of Carrier Lifetime Measurements and...

Comparison of Carrier Lifetime Measurements and Mapping in 4H SiC Using Time Resolved Photoluminscence and μ-PCD

Abstract:

Carrier lifetime measurements and wafer mappings have been done on several different 4H SiC wafers to compare two different measurement techniques, time-resolved photoluminescence and microwave induced photoconductivity decay. The absolute values of the decay time differ with a factor of two, as expected from recombination and measurement theory. Variations within each wafer are comparable with the two techniques. Both techniques are shown to be sensitive for substrate quality and distribution of extended defects.

You might also be interested in these eBooks

Silicon Carbide and Related Materials 2013

View Preview

Info:

Periodical:

Materials Science Forum (Volumes 778-780)

Pages:

301-304

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.778-780.301

Citation:

Cite this paper

Online since:

February 2014

Authors:

Birgit Kallinger, Mathias Rommel, Louise Lilja, Jawad Hassan, Ian D. Booker, Erik Janzén, J. Peder Bergman*

Keywords:

Carrier Lifetime, Photoluminescence (PL), Silicon Carbide (SiC), Μ-Pcd

Export:

RIS, BibTeX

Price:

Permissions CCC:

Request Permissions

Permissions PLS:

Request Permissions

Сopyright:

Citation:

* - Corresponding Author

References

[1] H. Matsunami, T. Kimoto; Mat. Sci. Eng. R. 20 (1997) 125-166.

Google Scholar

[2] H. Lendenmann, F. Dahlquist, J. P. Bergman, H. Bleichner, C. Hallin; Mater. Sci. Forum 389-393 (2002) 1259-1264.

DOI: 10.4028/www.scientific.net/msf.389-393.1259

Google Scholar

[3] P. B. Klein; J. Appl. Phys. 103 (2008) 033702.

Google Scholar

[4] N. T. Son, X. T. Trinh, L. S. Løvlie, B. G. Svensson, K. Kawahara, J. Suda, T. Kimoto, T. Umeda, J. Isoya, T. Makino, T. Ohshima, E. Janzén; Phys. Rev. Lett. 109 (2012) 187603.

DOI: 10.1103/physrevlett.109.187603

Google Scholar

[5] B. Kallinger, P. Berwian, J. Friedrich, M. Rommel, M. Azizi, C. Hecht and P. Friedrichs; Materials Science Forum Vols. 740-742 (2013) pp.633-636.

DOI: 10.4028/www.scientific.net/msf.740-742.633

Google Scholar

[6] L. Lilja, J. Hassan, I. Booker, J.P. Bergman and Erik Janzén; Materials Science Forum Vols. 740-742 (2013) pp.637-640.

DOI: 10.4028/www.scientific.net/msf.740-742.637

Google Scholar

[7] P. Scajev, V. Gudelius, K. Jarasinas, P. Klein; J. Appl. Phys, 108, 023705 (2010) p.023705.

Google Scholar

[7] J. P. Bergman, H. Lendenmann, P. Å. Nilsson, U. Lindefelt and P. Skytt; Mater. Sci. Forum 353-356 (2001) 299-302.

DOI: 10.4028/www.scientific.net/msf.353-356.299

Google Scholar