Identification of the Negative Carbon Vacancy at Quasi-Cubic Site in 4H-SiC by EPR and Theoretical Calculations

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Abstract:

In freestanding n-type 4H-SiC epilayers irradiated with low-energy (250 keV) electrons at room temperature, the electron paramagnetic resonance (EPR) spectrum of the negative carbon vacancy at the hexagonal site, VC- (h), and a new signal were observed. From the similarity in defect formation and the spin-Hamiltonian parameters of the two defects, the new center is suggested to be the negative C vacancy at the quasi-cubic site, VC- (k). The identification is further supported by hyperfine calculations.

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Materials Science Forum (Volumes 778-780)

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285-288

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February 2014

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© 2014 Trans Tech Publications Ltd. All Rights Reserved

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