Diffusion of Alkali Metals in SiC

Article Preview

Abstract:

Diffusion of lithium, sodium and potassium in SiC has been studied by secondary ion mass spectrometry. The alkali metal diffusion sources have been introduced by ion implantation. Subsequent anneals have been carried out in vacuum or in Ar atmosphere in the temperature range 700 °C - 1500 °C for 5 min to 16 h. The bombardment-induced defects in the vicinity of the ion implanted profile are readily decorated by the implanted . In the bulk, the diffusing alkali metals are most likely trapped and detrapped at boron and/or other defects during diffusion. The diffusivity of the studied alkali metals decreases as the mass increases, Li+<Na+<K+, but the sodium mobility in SiC is substantial already at 1100 °C.

You might also be interested in these eBooks

Info:

Periodical:

Materials Science Forum (Volumes 778-780)

Pages:

297-300

Citation:

Online since:

February 2014

Export:

Price:

Permissions CCC:

Permissions PLS:

Сopyright:

© 2014 Trans Tech Publications Ltd. All Rights Reserved

Share:

Citation:

[1] M.K. Linnarsson, et al., Mat. Sci. and Eng. B61 (1999) 275.

Google Scholar

[2] M.S. Janson, et al., Phys. Rev. B61, (2000) 7195.

Google Scholar

[3] M.K. Linnarsson, et al., Mat. Res. Soc. Symp. Proc. Vol 742 (2003) 291.

Google Scholar

[4] M.S. Janson, et al., Physica Scripta. T108 (2004) 99.

Google Scholar

[5] V. Tilak, et al., IEEE Trans. Electr. Device, 56 (2009) 162.

Google Scholar

[6] B.R. Tuttle, et al., J. Appl. Phys. 109 (2011) 023702.

Google Scholar

[7] P.G. Hermannsson and E.Ö. Sveinbjörnsson, Phys. Scr. T148 (2012) 014004.

Google Scholar

[8] N. Achtziger, et al., Appl. Phys. Lett., 73 (1998) 945.

Google Scholar

[9] G. Greeuw and J.F. Verwey, J. Appl. Phys. 56 (1984) 2218.

Google Scholar

[10] E.Ö. Sveinbjörnsson, et al., Mat. Sci. Forum 556 (2007) 487.

Google Scholar

[11] I. Constant, et al., Sci. Technol. 15 (2000) 61.

Google Scholar

[12] R.D. Shannon, Acta Cryst. A32 (1976) 751.

Google Scholar

[13] A. Hallén et al,. in: S.E. Saddow and A. Agarwal (eds. ) Advances in Silicon Carbide Processing and Applications, Artech House Inc., Boston, 2004, pp.109-153.

Google Scholar

[14] J. Sangster, J. Phase Equilib. Diff. 27 (2006) 190.

Google Scholar

[15] M.S. Janson, et al., Appl. Phys. Lett. 76 (2000) 1434.

Google Scholar

[16] M.K. Linnarsson et al., Appl. Surf. Sci. 203 (2003) 427.

Google Scholar