Nanostructure Control of Si and Ge Quantum Dots Based Solar Cells Using Plasma Processes

Masaharu Shiratani; Giichiro Uchida; Hyun Woong Seo; Daiki Ichida; Kazunori Koga; Naho Itagaki; Kunihiro Kamataki

doi:10.4028/www.scientific.net/MSF.783-786.2022

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HomeMaterials Science ForumMaterials Science Forum Vols. 783-786Nanostructure Control of Si and Ge Quantum Dots...

Nanostructure Control of Si and Ge Quantum Dots Based Solar Cells Using Plasma Processes

Abstract:

We report characteristics of quantum dot (QD) sensitized solar cells using Si nanoparticles and Ge nanoparticles. Si nanoparticles were synthesized by multi-hollow discharge plasma chemical vapor deposition, whereas Ge nanoparticles were done by a radio frequency magnetron sputtering using Ar+H₂ under high pressure conditions. The electrical power generation from Si QDs and Ge QDs was confirmed. Si QD sensitized solar cells show an efficiency of 0.024%, fill factor of 0.32, short-circuit current of 0.75 mA/cm² and open-circuit voltage of 0.10 V, while Ge QD sensitized solar cells show an efficiency of 0.036%, fill factor of 0.38, short-circuit current of 0.64 mA/cm² and open-circuit voltage of 0.15 V.

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Periodical:

Materials Science Forum (Volumes 783-786)

Pages:

2022-2027

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.783-786.2022

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Online since:

May 2014

Authors:

Masaharu Shiratani*, Giichiro Uchida, Hyun Woong Seo, Daiki Ichida, Kazunori Koga, Naho Itagaki, Kunihiro Kamataki

Keywords:

Ge, Nanoparticle, Plasma CVD, Quantum Dot Solar Cell, Si, Sputtering

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