Paper Titles
Engineering Single Defects in Silicon Carbide Bulk, Nanostructures and Devices
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ESR Study on Hydrogen Passivation of Intrinsic Defects in p-Type and Semi-Insulating 4H-SiC
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First Principles Identification of Divacancy Related Photoluminescence Lines in 4H and 6H-SiC
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Fluorescent P-Type 4H-SiC Grown by PVT Method
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Formation and Annihilation of Carbon Vacancies in 4H-SiC
p.331
Lifetime Measurement in n-Type 4H-SiC by Mean of the Microwave Phase-Shift
p.337
Modelling of Effective Minority Carrier Lifetime in 4H-SiC n-Type Epilayers
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Recombination Processes in 4H-SiC pn Structures
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Study of Nanoscale Inhomogeneities in Silicon Carbide Crystals via Small-Angle X-Ray Scattering
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Formation and Annihilation of Carbon Vacancies in 4H-SiC

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Abstract:

The carbon vacancy (VC) is a major point defect in high-purity 4H-SiC epitaxial layers limiting the minority charge carrier lifetime. In layers grown by chemical vapor deposition techniques, the VC concentration is typically in the range of 1012 cm-3 and after device processing at temperatures approaching 2000 °C, it can be enhanced by several orders of magnitude. In the present contribution, we show that the cooling rate after high-temperature processing has a profound influence on the resulting VC concentration where a slow rate promotes elimination of VC. Further, isochronal annealing of as-grown and as-oxidized epi-layers protected by a carbon-cap was undertaken between 800 °C and 1600 °C. The results reveal that thermodynamic equilibrium of VC is established rather rapidly at moderate temperatures, reaching a VC concentration of only a few times 1011 cm-3 after 40 min at 1500 °C. Hence, the concept of eliminating VC’s by annealing at moderate temperatures under C-rich equilibrium conditions shows great promise and enables re-annealing of high-temperature processed wafers, in contrast to the procedures commonly used today to eliminate VC. In-diffusion of carbon interstitials and out-diffusion of VC’s are discussed as the kinetics processes establishing the thermodynamic equilibrium

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Silicon Carbide and Related Materials 2015 View Preview

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Periodical:

Materials Science Forum (Volume 858)

Pages:

331-336

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.858.331

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Online since:

May 2016

Authors:

Hussein M. Ayedh, Viktor Bobal, Roberta Nipoti, Anders Hallén, Bengt Gunnar Svensson

Keywords:

Carbon Vacancy, DLTS, Lifetime Enhancement, Thermodynamic Equilibrium

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© 2016 Trans Tech Publications Ltd. All Rights Reserved

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