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Numerical Study of Energy Capability of Si/SiC LDMOSFETs

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Abstract:

A comparable study is made on the energy capability of 190 V LDMOSFETs in Si/SiC, SOI, PSOI and PSOSiC technology, using capacitive and inductive switching circuits established in SILVACO Mixed-mode simulators. The results show that the PSOSiC has a thermal advantage compared with other SOI structures under a 48-μs-power-pulse condition, but the Si/SiC device offers superior cooling and energy handling ability in all switching cases despite having a larger chip area.

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Periodical:

Materials Science Forum (Volume 897)

Pages:

751-754

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.897.751

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Online since:

May 2017

Authors:

Chun W. Chan*, Fan Li, Philip Andrew Mawby, Peter Michael Gammon

Keywords:

Electro-Thermal Simulation, Energy Capability, LDMOSFETs, RESURF, Self-Heating, Si/SiC Substrate, SOI Technology

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© 2017 Trans Tech Publications Ltd. All Rights Reserved

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