X-Ray Topography Analysis of 4H-SiC Crystals Grown by the High-Temperature Gas Source Method

Isaho Kamata; Norihiro Hoshino; Yuichiro Tokuda; Emi Makino; Takahiro Kanda; Naohiro Sugiyama; Hironari Kuno; Jun Kojima; Hidekazu Tsuchida

doi:10.4028/www.scientific.net/MSF.924.180

Paper Titles

Influence of Triangular Defects on the Electrical Characteristics of 4H-SiC Devices
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Origin Analysis and Elimination of Obtuse Triangular Defects in 4° Off 4H-SiC Epitaxy
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In Situ Synchrotron X-Ray Topography Observation of Double-Ended Frank-Read Sources in PVT-Grown 4H-SiC Wafers
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Direct Observation of Stress Relaxation Process in 4H-SiC Homoepitaxial Layers via In Situ Synchrotron X-Ray Topography
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X-Ray Topography Analysis of 4H-SiC Crystals Grown by the High-Temperature Gas Source Method
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Analysis of Compensation Effects in Aluminum-Implanted 4H-SiC Devices
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Comparison of Conduction Mechanisms in Heavily Al-Doped 4H-SiC and Heavily Al- and N-Codoped 4H-SiC
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Modeling and Simulation of Electrical Activation of Acceptor-Type Dopants in Silicon Carbide
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Optical Stressing of 4H-SiC Material and Devices
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HomeMaterials Science ForumMaterials Science Forum Vol. 924X-Ray Topography Analysis of 4H-SiC Crystals Grown...

X-Ray Topography Analysis of 4H-SiC Crystals Grown by the High-Temperature Gas Source Method

Abstract:

Synchrotron X-ray topography was carried out for 4H-SiC crystals grown by high-temperature gas source method, and transmission topography analysis with g= or 0004 was carried out for the cross-sectional samples. Dislocation contrasts extended in the growth direction were observed and the propagation behavior of threading screw dislocations (TSDs), threading edge dislocations (TEDs), basal plane dislocations (BPDs) and stacking faults (SFs) in the facet and step-flow regions were discussed. The propagation of dislocations in the fast grown crystal with a growth rate of 3.1mm/h was also evaluated by cross-sectional topography.

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Periodical:

Materials Science Forum (Volume 924)

Pages:

180-183

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.924.180

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Online since:

June 2018

Authors:

Isaho Kamata*, Norihiro Hoshino, Yuichiro Tokuda, Emi Makino, Takahiro Kanda, Naohiro Sugiyama, Hironari Kuno, Jun Kojima, Hidekazu Tsuchida

Keywords:

High-Temperature Gas Source Method, TED, TSD, X-Ray Topography

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References

[1] N. Hoshino, I. Kamata, Y. Tokuda, E. Makino, N. Sugiyama, J. Kojima and H. Tsuchida, Mater. Sci. Forum, 858 (2016) 29.

DOI: 10.4028/www.scientific.net/msf.858.23

Google Scholar

[2] F. Wu, H. Wang, S. Byrappa, B. Raghothamachar, M. Dudley, E. K. Sanchez, D. Hansen, R. Drachev, S. G. Mueller and M.J. Loboda, Mater. Sci. Forum 717-720 (2012) 343.

Google Scholar

[3] I. Kamata, N. Hoshino, Y. Tokuda, E. Makino, N. Sugiyama, J. Kojima and H. Tsuchida, Mater. Sci. Forum, 858 (2016) 61.

DOI: 10.4028/www.scientific.net/msf.858.23

Google Scholar

[4] I. Kamata, N. Hoshino, Y. Tokuda, E. Makino, J. Kojima and H. Tsuchida, Mater. Sci. Forum, 778-780 (2014) 59.

Google Scholar

[5] H. Wang, F. Wu, S. Byrappa, S. Sun, B. Raghothamachar, M. Dudley, E. K. Sanchez, D. Hansen, R. Drachev, S. G. Mueller and M. J. Loboda, Appl. Phys. Lett. 100 (2012) 172105.

DOI: 10.1063/1.4704679

Google Scholar