X-Ray Topography Analysis of 4H-SiC Crystals Grown by the High-Temperature Gas Source Method

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Synchrotron X-ray topography was carried out for 4H-SiC crystals grown by high-temperature gas source method, and transmission topography analysis with g= or 0004 was carried out for the cross-sectional samples. Dislocation contrasts extended in the growth direction were observed and the propagation behavior of threading screw dislocations (TSDs), threading edge dislocations (TEDs), basal plane dislocations (BPDs) and stacking faults (SFs) in the facet and step-flow regions were discussed. The propagation of dislocations in the fast grown crystal with a growth rate of 3.1mm/h was also evaluated by cross-sectional topography.

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Periodical:

Edited by:

Robert Stahlbush, Philip Neudeck, Anup Bhalla, Robert P. Devaty, Michael Dudley and Aivars Lelis

Pages:

180-183

Citation:

I. Kamata et al., "X-Ray Topography Analysis of 4H-SiC Crystals Grown by the High-Temperature Gas Source Method", Materials Science Forum, Vol. 924, pp. 180-183, 2018

Online since:

June 2018

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$38.00

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DOI: https://doi.org/10.1063/1.4704679

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