Comparison of Conduction Mechanisms in Heavily Al-Doped 4H-SiC and Heavily Al- and N-Codoped 4H-SiC

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The conduction mechanism in heavily Al-doped or heavily Al-and N-codoped p-type 4H-SiC epilayers was investigated. In both the singly-doped and codoped samples with an Al concentration (CAl) between 4x1019 and 2x1020 cm-3, band and nearest-neighbor hopping (NNH) conductions appeared in high and low temperature ranges, respectively. The codoping of N donors makes the NNH conduction dominant at temperatures higher than in the singly-doped samples. In both the singly-doped and codoped samples with CAl between 1x1019 and 4x1019 cm-3, an unexpected conduction appeared between the regions of the band and NNH conductions.

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Edited by:

Robert Stahlbush, Philip Neudeck, Anup Bhalla, Robert P. Devaty, Michael Dudley and Aivars Lelis

Pages:

188-191

Citation:

H. Matsuura et al., "Comparison of Conduction Mechanisms in Heavily Al-Doped 4H-SiC and Heavily Al- and N-Codoped 4H-SiC", Materials Science Forum, Vol. 924, pp. 188-191, 2018

Online since:

June 2018

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