Comparison of Conduction Mechanisms in Heavily Al-Doped 4H-SiC and Heavily Al- and N-Codoped 4H-SiC
The conduction mechanism in heavily Al-doped or heavily Al-and N-codoped p-type 4H-SiC epilayers was investigated. In both the singly-doped and codoped samples with an Al concentration (CAl) between 4x1019 and 2x1020 cm-3, band and nearest-neighbor hopping (NNH) conductions appeared in high and low temperature ranges, respectively. The codoping of N donors makes the NNH conduction dominant at temperatures higher than in the singly-doped samples. In both the singly-doped and codoped samples with CAl between 1x1019 and 4x1019 cm-3, an unexpected conduction appeared between the regions of the band and NNH conductions.
Robert Stahlbush, Philip Neudeck, Anup Bhalla, Robert P. Devaty, Michael Dudley and Aivars Lelis
H. Matsuura et al., "Comparison of Conduction Mechanisms in Heavily Al-Doped 4H-SiC and Heavily Al- and N-Codoped 4H-SiC", Materials Science Forum, Vol. 924, pp. 188-191, 2018