Paper Titles
Influence of Dislocations to the Diamond SBD Reverse Characteristics
p.212
Comparison of the Effects of Electron and Proton Irradiation on 4H-SiC and Si Device Structures
p.217
Optical and Microstructural Investigation of Heavy B-Doping Effects in Sublimation-Grown 3C-SiC
p.221
Deep Level Defects in 4H-SiC Epitaxial Layers
p.225
Radiation Hardness for Silicon Oxide and Aluminum Oxide on 4H-SiC
p.229
Kinetics Modeling of the Carbon Vacancy Thermal Equilibration in 4H-SiC
p.233
High Resolution Optical Spectroscopy of Free Exciton and Electronic Band Structure near the Fundamental Gap in 4H SiC
p.239
Growth Conditions and In Situ Computed Tomography Analysis of Facetted Bulk Growth of SiC Boules
p.245
Rearrangement of Surface Structure of 4o Off-Axis 4H-SiC (0001) Epitaxial Wafer by High Temperature Annealing in Si/Ar Ambient
p.249

Radiation Hardness for Silicon Oxide and Aluminum Oxide on 4H-SiC

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Abstract:

The radiation hardness of two dielectrics, SiO2 and Al2O3, deposited on low doped, n-type 4H-SiC epitaxial layers has been investigated by exposing MOS structures involving these materials to MeV proton irradiation. The samples are examined by capacitance voltage (CV) measurements and, from the flat band voltage shift, it is concluded that positive charge is induced in the exposed structures detectable for fluence above 1×1011 cm-2. The positive charge increases with proton fluence, but the SiO2/4H-SiC structures are slightly more sensitive, showing that Al2O3 can provide a more radiation hard passivation, or gate dielectric for 4H-SiC devices.

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Periodical:

Materials Science Forum (Volume 924)

Pages:

229-232

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.924.229

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Online since:

June 2018

Authors:

Anders Hallén*, Sethu Saveda Suvanam

Keywords:

Capacitance, Charge, Dielectric, Flat Band Voltage, Irradiation, Protons

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© 2018 Trans Tech Publications Ltd. All Rights Reserved

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