Suppression of Polytype Transformation with Extremely Low-Dislocation-Density 4H-SiC Crystal in Two-Step Solution Method

Kenta Murayama; Shunta Harada; Fumihiro Fujie; Xin Bo Liu; Ryota Murai; Can Zhu; Kenji Hanada; Miho Tagawa; Toru Ujihara

doi:10.4028/www.scientific.net/MSF.924.60

Paper Titles

Experimental Determination of Carbon Solubility in Si_0.56Cr_0.4M_0.04 (M = Transition Metal) Solvents for Solution Growth of SiC
p.43

Modification of Crucible Shape in Top Seeded Solution Growth of SiC Crystal
p.47

Solution Growth of SiC from the Crucible Bottom with Dipping under Unsaturation State of Carbon in Solvent
p.51

Influence of Additives on Surface Smoothness and Polytype Stability in Solution Growth of n-Type 4H-SiC
p.55

Suppression of Polytype Transformation with Extremely Low-Dislocation-Density 4H-SiC Crystal in Two-Step Solution Method
p.60

Status and Trends in Epitaxy and Defects
p.67

99.9% BPD Free 4H-SiC Epitaxial Layer with Precisely Controlled Doping upon 3 x 150 mm Hot-Wall CVD
p.72

Growth of 150 mm 4H-SiC Epitaxial Layer by a Hot-Wall Reactor
p.76

Glide of Basal Plane Dislocations during 150 mm 4H-SiC Epitaxial Growth by a Hot-Wall Reactor
p.80

HomeMaterials Science ForumMaterials Science Forum Vol. 924Suppression of Polytype Transformation with...

Suppression of Polytype Transformation with Extremely Low-Dislocation-Density 4H-SiC Crystal in Two-Step Solution Method

Abstract:

We achieved the growth of extremely-high quality SiC crystal with two-step solution method with specially-designed seed crystals. The two-step growth consists of 1^st step growth on Si-face for the reduction of threading dislocations and 2^nd step growth on C-face for the reduction of basal plane dislocations and thickening. In this method, we can make the dislocation density extremely low, while the polytype easily changes during growth due to the absence of spiral hillocks originating from threading screw dislocation (TSD). In this study, we prepared specially designed seed crystals for both 1^st and 2^nd growth steps to provide steps continuously. In the seeds, a few TSDs exist at the upper-side of the step structure. Consequently, we demonstrated the suppression of the polytype transformation during the C-face growth with extremely low-dislocation-density crystal. Accordingly, we successfully obtained extremely low-dislocation density 4H-SiC with TSD, TED and BPD density of 11, 385 and 28 cm^-2.

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Periodical:

Materials Science Forum (Volume 924)

Pages:

60-63

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.924.60

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Online since:

June 2018

Authors:

Kenta Murayama*, Shunta Harada, Fumihiro Fujie, Xin Bo Liu, Ryota Murai, Can Zhu, Kenji Hanada, Miho Tagawa, Toru Ujihara

Keywords:

Polytype Transformation, Step-Flow Growth, Top-Seeded Solution Growth (TSSG)

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