Status and Trends in Epitaxy and Defects

Hiroshi Osawa; Y. Mabuchi; Yoshitaka Nishihara; L. Guo; N. Ishibashi; K. Fukada; Koji Kamei; Kenji Momose

doi:10.4028/www.scientific.net/MSF.924.67

Paper Titles

Modification of Crucible Shape in Top Seeded Solution Growth of SiC Crystal
p.47

Solution Growth of SiC from the Crucible Bottom with Dipping under Unsaturation State of Carbon in Solvent
p.51

Influence of Additives on Surface Smoothness and Polytype Stability in Solution Growth of n-Type 4H-SiC
p.55

Suppression of Polytype Transformation with Extremely Low-Dislocation-Density 4H-SiC Crystal in Two-Step Solution Method
p.60

Status and Trends in Epitaxy and Defects
p.67

99.9% BPD Free 4H-SiC Epitaxial Layer with Precisely Controlled Doping upon 3 x 150 mm Hot-Wall CVD
p.72

Growth of 150 mm 4H-SiC Epitaxial Layer by a Hot-Wall Reactor
p.76

Glide of Basal Plane Dislocations during 150 mm 4H-SiC Epitaxial Growth by a Hot-Wall Reactor
p.80

Growth of 4H-SiC Epitaxial Layer through Optimization of Buffer Layer
p.84

HomeMaterials Science ForumMaterials Science Forum Vol. 924Status and Trends in Epitaxy and Defects

Status and Trends in Epitaxy and Defects

Abstract:

SiC-powered devices which reduce the power loss, size, and weight of power converters are gradually appearing in the power electronics market. From now on, cost reduction and quality improvement of SiC epitaxial wafers is required to further increase their popularity. This paper describes the state of development of mass production of the epi-wafer at Showa Denko K. K.