Status and Trends in Epitaxy and Defects

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SiC-powered devices which reduce the power loss, size, and weight of power converters are gradually appearing in the power electronics market. From now on, cost reduction and quality improvement of SiC epitaxial wafers is required to further increase their popularity. This paper describes the state of development of mass production of the epi-wafer at Showa Denko K. K.

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Edited by:

Robert Stahlbush, Philip Neudeck, Anup Bhalla, Robert P. Devaty, Michael Dudley and Aivars Lelis

Pages:

67-71

Citation:

H. Osawa et al., "Status and Trends in Epitaxy and Defects", Materials Science Forum, Vol. 924, pp. 67-71, 2018

Online since:

June 2018

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$38.00

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[1] T. Masuda, A. Miyasaka, J. Norimatsu, Y. Tajima, D. Muto, K. Momose, and H. Osawa, Mater. Sci. Forum 858 (2016) 201.

DOI: https://doi.org/10.4028/www.scientific.net/msf.858.201

[2] Y. Mabuchi, T. Masuda, D. Muto, K. Momose, and H. Osawa, Mater. Sci. Forum 897 (2017) 75.

[3] L. Guo, K. Kamei, K. Momose, and H. Osawa, Mater. Sci. Forum 897 (2017) 39.

[4] N. Ishibashi, K. Fukada, A. Bandoh, K. Momose, and H. Osawa, Mater. Sci. Forum 897 (2017) 55.

[5] K. Fukada, N. Ishibashi, Y. Miyasaka, A. Bandoh, K. Momose, and H. Osawa, Mater. Sci. Forum 897 (2017) 83.

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