99.9% BPD Free 4H-SiC Epitaxial Layer with Precisely Controlled Doping upon 3 x 150 mm Hot-Wall CVD

Keiji Wada; Takemi Terao; Hironori Itoh; Tsutomu Hori; Hideyuki Doi; Masaki Furumai; Tatsuya Tanabe

doi:10.4028/www.scientific.net/MSF.924.72

Paper Titles

Solution Growth of SiC from the Crucible Bottom with Dipping under Unsaturation State of Carbon in Solvent
p.51

Influence of Additives on Surface Smoothness and Polytype Stability in Solution Growth of n-Type 4H-SiC
p.55

Suppression of Polytype Transformation with Extremely Low-Dislocation-Density 4H-SiC Crystal in Two-Step Solution Method
p.60

Status and Trends in Epitaxy and Defects
p.67

99.9% BPD Free 4H-SiC Epitaxial Layer with Precisely Controlled Doping upon 3 x 150 mm Hot-Wall CVD
p.72

Growth of 150 mm 4H-SiC Epitaxial Layer by a Hot-Wall Reactor
p.76

Glide of Basal Plane Dislocations during 150 mm 4H-SiC Epitaxial Growth by a Hot-Wall Reactor
p.80

Growth of 4H-SiC Epitaxial Layer through Optimization of Buffer Layer
p.84

High In-Wafer Uniformity of Growth Rate and Carrier Concentration on n-Type 4H-SiC Epitaxial Films Achieved by High Speed Wafer Rotation Vertical CVD Tool
p.88

HomeMaterials Science ForumMaterials Science Forum Vol. 92499.9% BPD Free 4H-SiC Epitaxial Layer with...

99.9% BPD Free 4H-SiC Epitaxial Layer with Precisely Controlled Doping upon 3 x 150 mm Hot-Wall CVD

Abstract:

Epitaxial growth of 4H-SiC on 150 mm wafers has been investigated using experimental results and numerical simulations toward the goal of BPDs reduction and doping uniformity control in the epitaxial layer. We have reported analyses of the temperature distribution dependence of the doping uniformity and BPDs propagations on the 3 x 150 mm multi-wafer CVD epitaxial growth. By optimizing epitaxial growth conditions, we have demonstrated an excellent doping and thickness uniformity and a 99.9% BPD free region, simultaneously.