99.9% BPD Free 4H-SiC Epitaxial Layer with Precisely Controlled Doping upon 3 x 150 mm Hot-Wall CVD

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Epitaxial growth of 4H-SiC on 150 mm wafers has been investigated using experimental results and numerical simulations toward the goal of BPDs reduction and doping uniformity control in the epitaxial layer. We have reported analyses of the temperature distribution dependence of the doping uniformity and BPDs propagations on the 3 x 150 mm multi-wafer CVD epitaxial growth. By optimizing epitaxial growth conditions, we have demonstrated an excellent doping and thickness uniformity and a 99.9% BPD free region, simultaneously.

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Periodical:

Edited by:

Robert Stahlbush, Philip Neudeck, Anup Bhalla, Robert P. Devaty, Michael Dudley and Aivars Lelis

Pages:

72-75

Citation:

K. Wada et al., "99.9% BPD Free 4H-SiC Epitaxial Layer with Precisely Controlled Doping upon 3 x 150 mm Hot-Wall CVD", Materials Science Forum, Vol. 924, pp. 72-75, 2018

Online since:

June 2018

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$38.00

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[1] T. Kimoto: Jpn. J. Appl. Phys., vol. 43, p.040103, (2015).

[2] A. A. Burk et al.: Mat. Sci. Forum, Vols.778-780, pp.113-116, (2014).

[3] T. Höchbauer et al.: Mat. Sci. Forum. Vols. 821-823, pp.165-168, (2015).

[4] J. Nishio et al.: Mat. Sci. Forum. Vols. 821-823, pp.169-172, (2015).

[5] T. Tanaka et al.: Mat. Sci. Forum. Vols. 778-780, pp.91-94, (2014).

[6] K. Masumoto et al.: Mat. Sci. Forum. Vols. 778-780, pp.99-102, (2014).

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