High In-Wafer Uniformity of Growth Rate and Carrier Concentration on n-Type 4H-SiC Epitaxial Films Achieved by High Speed Wafer Rotation Vertical CVD Tool

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In this study, influence of both Si/H2 ratio and C/Si ratio on growth rate uniformity and carrier concentration uniformity of n-type 4H-SiC epitaxial films grown by high speed wafer rotation vertical CVD tool was investigated. It was found that changes in radial profile of the growth rate and the carrier concentration obtained by varying Si/H2 ratio showed quite similar behavior to those obtained by varying C/Si ratio. Such a similar trend would suggest that the distribution of local C/Si ratio near the wafer surface changes depending on total Si/H2 ratio similarly to total C/Si ratio. Additionally, by using this relationship, both the growth rate uniformity of 49.2 μm/h ±1.78% (1.15% σ/mean) and carrier concentration uniformity of 1.08 ×1016cm-3 ±6.15% (3.40% σ/mean) was achieved.

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Periodical:

Edited by:

Robert Stahlbush, Philip Neudeck, Anup Bhalla, Robert P. Devaty, Michael Dudley and Aivars Lelis

Pages:

88-91

Citation:

Y. Daigo et al., "High In-Wafer Uniformity of Growth Rate and Carrier Concentration on n-Type 4H-SiC Epitaxial Films Achieved by High Speed Wafer Rotation Vertical CVD Tool", Materials Science Forum, Vol. 924, pp. 88-91, 2018

Online since:

June 2018

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$38.00

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[1] H. Fujibayashi et al., Appl. Phys. Express 7, (2014) 015502.

[2] H. Fujibayashi et al., U.S. Patent, No. US20160138190 A1 (May 19, 2016).

[3] T. Tanaka et al., Materials Science Forum 821-823, (2015) 135.

[4] K. Danno et al., Jpn. J. Appl. Phys. 43, (2004) L969.

[5] R. Arvinte et al., Materials Science Forum 821-823, (2015) 149.

[6] Y. Daigo et al, International Conference on Silicon Carbide and Related Materials, (2017) TU.AP.2.

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