High In-Wafer Uniformity of Growth Rate and Carrier Concentration on n-Type 4H-SiC Epitaxial Films Achieved by High Speed Wafer Rotation Vertical CVD Tool

Yoshiaki Daigo; Akio Ishiguro; Shigeaki Ishii; Hideki Ito

doi:10.4028/www.scientific.net/MSF.924.88

Paper Titles

99.9% BPD Free 4H-SiC Epitaxial Layer with Precisely Controlled Doping upon 3 x 150 mm Hot-Wall CVD
p.72

Growth of 150 mm 4H-SiC Epitaxial Layer by a Hot-Wall Reactor
p.76

Glide of Basal Plane Dislocations during 150 mm 4H-SiC Epitaxial Growth by a Hot-Wall Reactor
p.80

Growth of 4H-SiC Epitaxial Layer through Optimization of Buffer Layer
p.84

High In-Wafer Uniformity of Growth Rate and Carrier Concentration on n-Type 4H-SiC Epitaxial Films Achieved by High Speed Wafer Rotation Vertical CVD Tool
p.88

Improved Uniformity of Silicon Carbide Epitaxy Grown in a High-Volume Multi-Cassette Epitaxy Reactor
p.92

Quick and Practical Cleaning Process for Silicon Carbide Epitaxial Reactor
p.96

Understanding the Chemistry in Silicon Carbide Chemical Vapor Deposition
p.100

Triangular Defects Reduction and Uniformity Improvement of 4H-SiC Epitaxial Growth in a Planetary Reactor
p.104

HomeMaterials Science ForumMaterials Science Forum Vol. 924High In-Wafer Uniformity of Growth Rate and...

High In-Wafer Uniformity of Growth Rate and Carrier Concentration on n-Type 4H-SiC Epitaxial Films Achieved by High Speed Wafer Rotation Vertical CVD Tool

Abstract:

In this study, influence of both Si/H₂ ratio and C/Si ratio on growth rate uniformity and carrier concentration uniformity of n-type 4H-SiC epitaxial films grown by high speed wafer rotation vertical CVD tool was investigated. It was found that changes in radial profile of the growth rate and the carrier concentration obtained by varying Si/H₂ ratio showed quite similar behavior to those obtained by varying C/Si ratio. Such a similar trend would suggest that the distribution of local C/Si ratio near the wafer surface changes depending on total Si/H₂ ratio similarly to total C/Si ratio. Additionally, by using this relationship, both the growth rate uniformity of 49.2 μm/h ±1.78% (1.15% σ/mean) and carrier concentration uniformity of 1.08 ×10¹⁶cm^-3 ±6.15% (3.40% σ/mean) was achieved.