Quick and Practical Cleaning Process for Silicon Carbide Epitaxial Reactor
In order to develop a quick and practical cleaning process for the silicon carbide chemical vapor deposition reactor, the pyrolytic carbon-coated susceptor was used. The 30-μm-thick silicon carbide film was formed on the susceptor; the film was cleaning by chlorine trifluoride gas at 460 °C for 15 min. The remained fluorine was removed by the annealing at 900 °C in ambient hydrogen. The pyrolytic carbon surface did not suffer from any damage, because the pyrolytic carbon film surface morphology after the cleaning process was the same as that before the silicon carbide film deposition.
Robert Stahlbush, Philip Neudeck, Anup Bhalla, Robert P. Devaty, Michael Dudley and Aivars Lelis
K. Shioda et al., "Quick and Practical Cleaning Process for Silicon Carbide Epitaxial Reactor", Materials Science Forum, Vol. 924, pp. 96-99, 2018