Quick and Practical Cleaning Process for Silicon Carbide Epitaxial Reactor

Kohei Shioda; Keisuke Kurashima; Hitoshi Habuka; Hideki Ito; Shinichi Mitani; Yoshinao Takahashi

doi:10.4028/www.scientific.net/MSF.924.96

Paper Titles

Glide of Basal Plane Dislocations during 150 mm 4H-SiC Epitaxial Growth by a Hot-Wall Reactor
p.80

Growth of 4H-SiC Epitaxial Layer through Optimization of Buffer Layer
p.84

High In-Wafer Uniformity of Growth Rate and Carrier Concentration on n-Type 4H-SiC Epitaxial Films Achieved by High Speed Wafer Rotation Vertical CVD Tool
p.88

Improved Uniformity of Silicon Carbide Epitaxy Grown in a High-Volume Multi-Cassette Epitaxy Reactor
p.92

Quick and Practical Cleaning Process for Silicon Carbide Epitaxial Reactor
p.96

Understanding the Chemistry in Silicon Carbide Chemical Vapor Deposition
p.100

Triangular Defects Reduction and Uniformity Improvement of 4H-SiC Epitaxial Growth in a Planetary Reactor
p.104

Reduction of Surface and PL Defects on n-Type 4H-SiC Epitaxial Films Grown Using a High Speed Wafer Rotation Vertical CVD Tool
p.108

Influence and Mutual Interaction of Process Parameters on the Z_1/2 Defect Concentration during Epitaxy of 4H-SiC
p.112

HomeMaterials Science ForumMaterials Science Forum Vol. 924Quick and Practical Cleaning Process for Silicon...

Quick and Practical Cleaning Process for Silicon Carbide Epitaxial Reactor

Abstract:

In order to develop a quick and practical cleaning process for the silicon carbide chemical vapor deposition reactor, the pyrolytic carbon-coated susceptor was used. The 30-μm-thick silicon carbide film was formed on the susceptor; the film was cleaning by chlorine trifluoride gas at 460 °C for 15 min. The remained fluorine was removed by the annealing at 900 °C in ambient hydrogen. The pyrolytic carbon surface did not suffer from any damage, because the pyrolytic carbon film surface morphology after the cleaning process was the same as that before the silicon carbide film deposition.

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Periodical:

Materials Science Forum (Volume 924)

Pages:

96-99

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.924.96

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Online since:

June 2018

Authors:

Kohei Shioda, Keisuke Kurashima, Hitoshi Habuka*, Hideki Ito, Shinichi Mitani, Yoshinao Takahashi

Keywords:

Chemical Vapor Deposition, Chlorine Trifluoride Gas, Epitaxial Reactor Cleaning

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