Triangular Defects Reduction and Uniformity Improvement of 4H-SiC Epitaxial Growth in a Planetary Reactor

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High quality SiC Epilayers are essential for the development of high performance power devices. Killer defects such as triangular defects could cause leakage current paths within the high voltage SiC devices. This paper reports on the recent advances in 4H-SiC epitaxial growth toward high-throughput production in a commercial planetary reactor. The triangular defects are suppressed by the optimized pre-etching process, and the physics behind was investigated. The doping and thickness uniformities of the intra-wafer and wafer-to-wafer have also been improved.

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104-107

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June 2018

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© 2018 Trans Tech Publications Ltd. All Rights Reserved

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[1] H. Lendenmann, F. Dahlquist, N. Johansson, R. Söderholm, P. A. Nilsson, P. Bergman, P. Skytt, Mater. Sci. Forum. 727, 353, (2001).

DOI: 10.4028/www.scientific.net/msf.353-356.727

Google Scholar

[2] T. Kimoto, Progress in Crystal Growth and Characterization of Materials. 62, 329, (2016).

Google Scholar

[3] R. A. Berechman, M. Skowronski, and Q. Zhang, J. Appl. Phys.105, 074513(2009).

Google Scholar

[4] S. Leone, F.C. Beyer, H. Pedersen, O. Kordina, A. Henry, E. Janze´n, Materials Research Bulletin. 46, 1272, (2011).

Google Scholar

[5] T.Okada, T. Kimoto, K. Yamai, et al. Mater. Sci. Eng.A. 67, 361, (2003).

Google Scholar