Triangular Defects Reduction and Uniformity Improvement of 4H-SiC Epitaxial Growth in a Planetary Reactor

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High quality SiC Epilayers are essential for the development of high performance power devices. Killer defects such as triangular defects could cause leakage current paths within the high voltage SiC devices. This paper reports on the recent advances in 4H-SiC epitaxial growth toward high-throughput production in a commercial planetary reactor. The triangular defects are suppressed by the optimized pre-etching process, and the physics behind was investigated. The doping and thickness uniformities of the intra-wafer and wafer-to-wafer have also been improved.

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Edited by:

Robert Stahlbush, Philip Neudeck, Anup Bhalla, Robert P. Devaty, Michael Dudley and Aivars Lelis

Pages:

104-107

Citation:

W. L. Lu et al., "Triangular Defects Reduction and Uniformity Improvement of 4H-SiC Epitaxial Growth in a Planetary Reactor", Materials Science Forum, Vol. 924, pp. 104-107, 2018

Online since:

June 2018

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$38.00

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