Understanding the Chemistry in Silicon Carbide Chemical Vapor Deposition
p.100
p.100
Triangular Defects Reduction and Uniformity Improvement of 4H-SiC Epitaxial Growth in a Planetary Reactor
p.104
p.104
Reduction of Surface and PL Defects on n-Type 4H-SiC Epitaxial Films Grown Using a High Speed Wafer Rotation Vertical CVD Tool
p.108
p.108
Influence and Mutual Interaction of Process Parameters on the Z1/2 Defect Concentration during Epitaxy of 4H-SiC
p.112
p.112
CVD Filling of Narrow Deep 4H-SiC Trenches in a Quasi-Selective Epitaxial Growth Mode
p.116
p.116
Hot Filament CVD Growth of 4H-SiC Epitaxial Layers
p.120
p.120
Stacking Faults Defects on 3C-SiC Homo-Epitaxial Films
p.124
p.124
Silicon (001) Heteroepitaxy on 3C-SiC(001)/Si(001) Seed
p.128
p.128
Performance and Reliability Impacts of Extended Epitaxial Defects on 4H-SiC Power Devices
p.137
p.137
CVD Filling of Narrow Deep 4H-SiC Trenches in a Quasi-Selective Epitaxial Growth Mode
Abstract:
By mapping the source and HCl flow rates dependent growth rates, the evolving trend of a quasi-selective epitaxial growth (quasi-SEG) that growing very thin epilayer on mesa top and ensuring an extremely low risk of voids defect generation was firstly figured out on a 5-μm 4H-SiC trench. Then, basing on the acquired knowledge, a 25-μm 4H-SiC trench with an aspect ratio up to ~10 was completely filled in the quasi-SEG mode.
You might also be interested in these eBooks
Info:
Periodical:
Materials Science Forum (Volume 924)
Pages:
116-119
Citation:
Online since:
June 2018
Keywords:
Price:
Сopyright:
© 2018 Trans Tech Publications Ltd. All Rights Reserved
Share:
Citation: