Influence and Mutual Interaction of Process Parameters on the Z1/2 Defect Concentration during Epitaxy of 4H-SiC

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The development of bipolar 4H-SiC devices for high blocking voltages requires the growth of high carrier lifetime epitaxial layers with low Z1/2 concentrations. This paper shows a comprehensive investigation of the influence of epitaxial growth parameters (C/Si ratio and growth temperature) on Z1/2 concentration and minority carrier lifetime. On the basis of a discovered exponential correlation of Z1/2 with the C/Si ratio and growth temperature, a competitive low Z1/2 concentration of 1.9∙1012 cm-3 could be achieved by lowering the growth temperature and switching to higher C/Si ratio. Thermodynamic considerations by an Arrhenius approach reveal a dependency of the formation enthalpy of Z1/2 on the thermal process and process conditions of the epitaxial growth. Furthermore, the correlation between Z1/2 and the effective minority carrier lifetime confirms the occurrence of a necessary second recombination mechanism beside the common recombination at deep levels by Shockley-Read-Hall for low Z1/2 concentration.

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Periodical:

Edited by:

Robert Stahlbush, Philip Neudeck, Anup Bhalla, Robert P. Devaty, Michael Dudley and Aivars Lelis

Pages:

112-115

Citation:

J. Erlekampf et al., "Influence and Mutual Interaction of Process Parameters on the Z1/2 Defect Concentration during Epitaxy of 4H-SiC", Materials Science Forum, Vol. 924, pp. 112-115, 2018

Online since:

June 2018

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