Improved Uniformity of Silicon Carbide Epitaxy Grown in a High-Volume Multi-Cassette Epitaxy Reactor

Michael F. MacMillan; Tim Oldham; V. Rengarajan; Ping Wu

doi:10.4028/www.scientific.net/MSF.924.92

Paper Titles

Growth of 150 mm 4H-SiC Epitaxial Layer by a Hot-Wall Reactor
p.76

Glide of Basal Plane Dislocations during 150 mm 4H-SiC Epitaxial Growth by a Hot-Wall Reactor
p.80

Growth of 4H-SiC Epitaxial Layer through Optimization of Buffer Layer
p.84

High In-Wafer Uniformity of Growth Rate and Carrier Concentration on n-Type 4H-SiC Epitaxial Films Achieved by High Speed Wafer Rotation Vertical CVD Tool
p.88

Improved Uniformity of Silicon Carbide Epitaxy Grown in a High-Volume Multi-Cassette Epitaxy Reactor
p.92

Quick and Practical Cleaning Process for Silicon Carbide Epitaxial Reactor
p.96

Understanding the Chemistry in Silicon Carbide Chemical Vapor Deposition
p.100

Triangular Defects Reduction and Uniformity Improvement of 4H-SiC Epitaxial Growth in a Planetary Reactor
p.104

Reduction of Surface and PL Defects on n-Type 4H-SiC Epitaxial Films Grown Using a High Speed Wafer Rotation Vertical CVD Tool
p.108

HomeMaterials Science ForumMaterials Science Forum Vol. 924Improved Uniformity of Silicon Carbide Epitaxy...

Improved Uniformity of Silicon Carbide Epitaxy Grown in a High-Volume Multi-Cassette Epitaxy Reactor

Abstract:

We report on the results of a Design of Experiments (DOE) matrix of growth runs used to tune and improve the uniformity of thickness and doping across both 100 mm and 150 mm SiC epiwafers in our epitaxy reactor. Improvement of uniformity beyond the initial process recipe from the tool vendor is shown. Temperature measurement along an entire wafer platter indicate that there is a gas cold region extending into the growth zone that maybe the root cause of the non-uniformity.

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Silicon Carbide and Related Materials 2017

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Periodical:

Materials Science Forum (Volume 924)

Pages:

92-95

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.924.92

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Online since:

June 2018

Authors:

Michael F. MacMillan*, Tim Oldham, V. Rengarajan, Ping Wu

Keywords:

4H SiC Epiwafers, CVD, DOE, Doping Uniformity, Thickness

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