Improved Uniformity of Silicon Carbide Epitaxy Grown in a High-Volume Multi-Cassette Epitaxy Reactor

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We report on the results of a Design of Experiments (DOE) matrix of growth runs used to tune and improve the uniformity of thickness and doping across both 100 mm and 150 mm SiC epiwafers in our epitaxy reactor. Improvement of uniformity beyond the initial process recipe from the tool vendor is shown. Temperature measurement along an entire wafer platter indicate that there is a gas cold region extending into the growth zone that maybe the root cause of the non-uniformity.

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Periodical:

Edited by:

Robert Stahlbush, Philip Neudeck, Anup Bhalla, Robert P. Devaty, Michael Dudley and Aivars Lelis

Pages:

92-95

Citation:

M. F. MacMillan et al., "Improved Uniformity of Silicon Carbide Epitaxy Grown in a High-Volume Multi-Cassette Epitaxy Reactor", Materials Science Forum, Vol. 924, pp. 92-95, 2018

Online since:

June 2018

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