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HomeMaterials Science ForumMaterials Science Forum Vol. 924Influence of Additives on Surface Smoothness and...

Influence of Additives on Surface Smoothness and Polytype Stability in Solution Growth of n-Type 4H-SiC

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Abstract:

We have investigated the dependence of the macrostep height on various additives in solution growth of n-type 4H-SiC. Surface modification by adding transition elements in periods 4‒6 (Sc, Ti, V, Mn, Fe, Co, Ni, Cu, Y, Nb, Mo, Ce, and W) and group 13‒14 elements (B, Al, Ga, Ge, Sn) was systematically studied to find additives improving smoothness of the growth surface. We found that Sc, Co, Mo, and Ge improved surface smoothness in addition to the already-known additives, such as Al, B, and Sn. Besides, these additives (Sc, Co, Mo, Ge) give no measurable influence on the conductivity of n-type grown crystals. These results demonstrated that Sc, Co, Mo, Ge and Sn are useful additives for solution growth of n-type 4H-SiC.

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Silicon Carbide and Related Materials 2017

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Periodical:

Materials Science Forum (Volume 924)

Pages:

55-59

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.924.55

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Online since:

June 2018

Authors:

Naoyoshi Komatsu*, Takeshi Mitani, Yuichiro Hayashi, Tomohisa Kato, Hajime Okumura

Keywords:

Additive, Impurity, Solution Growth, Surface Morphology

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© 2018 Trans Tech Publications Ltd. All Rights Reserved

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[1] R. Yakimova, E. Janzen, Diamond Relat. Mater. 9 (2000) 432.

[2] K. Kamei, K. Kusunoki, N. Yashiro, N. Okada, T. Tanaka, A. Yauchi, J. Cryst. Growth 311 (2009) 855.

[3] Y. Yamamoto, S. Harada, K. Seki, A. Horio, T. Mitsuhashi, T. Ujihara, Appl. Phys. Express 5 (2012) 115501.

DOI: 10.1143/apex.5.115501

[4] S. Harada, Y. Yamamoto, K. Seki, A. Horio, T. Mitsuhashi, M. Tagawa, T. Ujihara, APL Mater. 1 (2013) 022109.

DOI: 10.1063/1.4818357

[5] C. Zhu, S. Harada, K. Seki, Huayu Zhang, H. Ninomi, M. Tagawa, T. Ujihara, Cryst. Growth Des. 13 (2013) 3691.

[6] T. Mitani, N. Komatsu, T. Takahashi, T. Kato, S. Harada, T. Ujihara, Y. Matsumoto, K. Kurashige, H. Okumura, J. Cryst. Growth 423 (2015) 45.

DOI: 10.1016/j.jcrysgro.2015.04.032

[7] T. Mitani, N. Komatsu, T. Takahashi, T. Kato, K. Fujii, T. Ujihara, Y. Matsumoto, K. Kurashige, H. Okumura, J. Cryst. Growth 401 (2014) 681.

DOI: 10.1016/j.jcrysgro.2013.11.031

[8] T. Mitani, N. Komatsu, T. Takahashi, T. Kato, T. Ujihara, Y. Matsumoto, K. Kurashige, H. Okumura, Mater. Sci. Forum 821-823 (2015) 9.

DOI: 10.4028/www.scientific.net/msf.821-823.9

[9] K. Kusunoki, K. Kamei, K. Seki, S. Harada, T. Ujihara, J. Cryst. Growth 392 (2014) 60.

[10] N. Komatsu, T. Mitani, T. Takahashi, T. Kato, K. Kurashige, Y. Matsumoto, T. Ujihara, H. Okumura, Mater. Sci. Forum 821-823 (2015) 14.

DOI: 10.4028/www.scientific.net/msf.821-823.14

[11] N. Komatsu, T. Mitani, Y. Hayashi, T. Kato, S. Harada, T. Ujihara, H. Okumura, J. Cryst. Growth 458 (2017) 37.

[12] S. Nakashima, T. Kitamura, T. Mitani, H. Okumura, Phys. Rev. B 76 (2007) 245208.

[13] N. Ohtani, M. Katsuno, M. Nakabayashi, T. Fujimoto, H. Tsuge, H. Yashiro, T. Aigo, H. Hirano, T. Hoshino, K. Tatsumi, J. Cryst. Growth 311 (2009) 1475.

DOI: 10.1016/j.jcrysgro.2009.01.119

[14] Z. Wang, T. Kawaguchi, K. Murayama, K. Aoyagi, S. Harada, M. Tagawa, T. Sakai, T. Kato, T. Ujihara, Mater. Sci. Forum 858 (2016) 57.

DOI: 10.4028/www.scientific.net/msf.858.57

[15] V. L. Stout, M. D. Gibbons, J. Appl. Phys. 26 (1955) 1488.

[16] <www.thermocalc.com/products-services/software/>.