Influence of Additives on Surface Smoothness and Polytype Stability in Solution Growth of n-Type 4H-SiC

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We have investigated the dependence of the macrostep height on various additives in solution growth of n-type 4H-SiC. Surface modification by adding transition elements in periods 4‒6 (Sc, Ti, V, Mn, Fe, Co, Ni, Cu, Y, Nb, Mo, Ce, and W) and group 13‒14 elements (B, Al, Ga, Ge, Sn) was systematically studied to find additives improving smoothness of the growth surface. We found that Sc, Co, Mo, and Ge improved surface smoothness in addition to the already-known additives, such as Al, B, and Sn. Besides, these additives (Sc, Co, Mo, Ge) give no measurable influence on the conductivity of n-type grown crystals. These results demonstrated that Sc, Co, Mo, Ge and Sn are useful additives for solution growth of n-type 4H-SiC.

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Edited by:

Robert Stahlbush, Philip Neudeck, Anup Bhalla, Robert P. Devaty, Michael Dudley and Aivars Lelis

Pages:

55-59

Citation:

N. Komatsu et al., "Influence of Additives on Surface Smoothness and Polytype Stability in Solution Growth of n-Type 4H-SiC", Materials Science Forum, Vol. 924, pp. 55-59, 2018

Online since:

June 2018

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$38.00

* - Corresponding Author

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