MnO₂/HF/HNO₃/H₂O System for High-Performance Texturization on Multi-Crystalline Silicon

Abstract:

It was found that the addition of MnO₂ particles into the HF/HNO₃/H₂O system could significantly improve the texturization etching performance on multi-crystalline silicon (mc-Si) wafer. For a wide component ratio range of HF/HNO₃/H₂O from HF-rich to HNO₃-rich, by optimizing the MnO₂ usage and the etching time, the addition of MnO₂ particles always reduced the texture reflectance greatly. Low weighted average surface reflectance (R_a) for the AM1.5G sun spectrum in the wavelength range of 380–1100 nm was achieved on both the slurry wire sliced (SWS) mc-Si and the diamond wire sliced (DWS) mc-Si. Due to its excellent effect and simple processing, the MnO₂/HF/HNO₃/H₂O etching system can be expected as a candidate for high-performance texturization on mc-Si wafer, especially on DWS mc-Si wafer.

• Periodical: Materials Science Forum (Volume 960)
• Pages: 263-267
• DOI: https://doi.org/10.4028/www.scientific.net/MSF.960.263
• Online since: June 2019
• Authors: Huan Liu, Lei Zhao*, Hong Wei Diao, Wen Jing Wang
• Keywords: MnO₂/HNO₃/HF/H₂O, Multi-Crystalline Silicon, Reflectance, Texturization

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