Paper Titles

Acknowledgements

Etching of Silicon Dioxide with Gas Phase HF and Water: Initiation, Bulk Etching, and Termination.
p.3

Evaluation of the Plasmaless Gaseous Etching Process
p.7

Single Wafer Hydrophobic Surface Preparation on 300mm by HF Vapor
p.11

Insights into HF-Last Processes and Particle Performance in a Single Wafer Spin Cleaning Tool
p.15

Implementing an In Situ Surface Preparation Prior to Ni Deposition for Ni Salicide Processes
p.19

Electrical Impact of Various Arsenic-Residues Cleanings
p.23

Elimination of Watermark on Extremely High-Doped Poly-Silicon Surfaces Using HF-Vapor Cleaning
p.27

Passivation Studies of Germanium Surfaces
p.33

HomeSolid State PhenomenaSolid State Phenomena Vol. 134Single Wafer Hydrophobic Surface Preparation on...

Single Wafer Hydrophobic Surface Preparation on 300mm by HF Vapor

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Periodical:

Solid State Phenomena (Volume 134)

Pages:

11-14

DOI:

https://doi.org/10.4028/www.scientific.net/SSP.134.11

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Online since:

November 2007

Authors:

Thierry Salvetat, Olivier Pollet, Pascal Besson, Névine Rochat

Keywords:

300mm Wafer, HF Last, HF Vapor, Hydrophobic Surface, Surface Preparation

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© 2008 Trans Tech Publications Ltd. All Rights Reserved

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[2] C.S. Lee et al., Journal of the electrochemical Society 143 (1996) p.1099.

[3] P.A. M Van der Heide et al., J. Vac. Sci. Technol. A 7 (3) (1989) p.1719.

[4] C. Anandan, R.H. Williams, Semicond. Sci. technol 5 (1990) pp.265-268.