Cleanliness Management in Advanced Microelectronic

Yannick Borde; Adrien Danel; A. Roche; Hervé Fontaine; C. Brych

doi:10.4028/www.scientific.net/SSP.145-146.159

Paper Titles

Reduction of Airborne Molecular Contamination on 300 mm Front Opening Unified POD (FOUP) and Wafers Surface by Vacuum Technology
p.139

Study of the Volatile Organic Contaminants Absorption and their Reversible Outgassing by FOUPs
p.143

Prevention of Condensation Defects on Contact Patterns by Improving Rinse Process
p.151

Single Wafer Ozone-Based Processing for Effective Edge Fluoropolymer Cleaning
p.155

Cleanliness Management in Advanced Microelectronic
p.159

Surface Preparation and Passivation of III-V Substrates for Future Ultra-High Speed, Low Power Logic Applications
p.165

Preparation and Characterization of Self-Assembled Monolayers on Germanium Surfaces
p.169

Application of Single-Wafer Wet Cleaning Prior to Epitaxial SiGe Process
p.173

Low Temperature Pre-Epi Treatment: Critical Parameters to Control Interface Contamination
p.177

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Cleanliness Management in Advanced Microelectronic

Abstract:

After technical results presented the last two years and new results on volatile contamination, this paper reviews the contamination management in advanced microelectronic and proposes rules for advanced Integrated Circuits (IC) manufacturing. The competitiveness of a production line is insured only if right contamination management rules are applied. These rules must allow a fast introduction of disruptive technologies while keeping as low as possible associated costs: processing on shared equipments, determination of acceptable levels of contamination with a good understanding of their detrimental impact on devices, knowledge on contamination dissemination mechanisms. Moreover, a control of contamination using appropriate cleanings and metrologies is mandatory.