Application of Single-Wafer Wet Cleaning Prior to Epitaxial SiGe Process
Strained silicon engineering was first used at the 90-nm node. Nowadays, a series of techniques has seen wide-spread use and many derivatives are available because of their ease of integration and cost-effective features [ , ]. As a main part of stressor technique, embedded SiGe-S/D technology is reported to improve the pMOSFET drive current [ , ].
Paul Mertens, Marc Meuris and Marc Heyns
K. Sano et al., "Application of Single-Wafer Wet Cleaning Prior to Epitaxial SiGe Process", Solid State Phenomena, Vols. 145-146, pp. 173-176, 2009