Silicon Surface Preparation and Passivation by Vapor Phase of Heavy Water

Andrea E. Pap; Zsolt Nényei; Gábor Battistig; István Bársony

doi:10.4028/www.scientific.net/SSP.145-146.181

Paper Titles

Surface Preparation and Passivation of III-V Substrates for Future Ultra-High Speed, Low Power Logic Applications
p.165

Preparation and Characterization of Self-Assembled Monolayers on Germanium Surfaces
p.169

Application of Single-Wafer Wet Cleaning Prior to Epitaxial SiGe Process
p.173

Low Temperature Pre-Epi Treatment: Critical Parameters to Control Interface Contamination
p.177

Silicon Surface Preparation and Passivation by Vapor Phase of Heavy Water
p.181

Defects of Silicon Substrates Caused by Electro-Static Discharge in Single Wafer Cleaning Process
p.185

Three-Step Room Temperature Wet Cleaning Process for Silicon Substrate
p.189

Effect of Wet Treatment on Stability of Spin-On Dielectrics for STI Gap-Filling in Nanoscale Memory
p.193

Influence of Wet Cleaning on Tungsten Deposited with Different Techniques
p.197

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Silicon Surface Preparation and Passivation by Vapor Phase of Heavy Water

Abstract:

The well known wet chemical treatments of the silicon surface and its native oxidation in air cause a high density of interface states, which predominantly originate from dangling bonds strained bonds or from bonds, between adsorbates and silicon surface atoms. Therefore, a number of wet-chemical treatments have been developed for ultraclean processing in order to produce chemically and electronically passivated surfaces [1]. The saturation of dangling bonds by hydrogen removes the surface states and replaces them by adsorbate-induced states, which influence the surface band-bending [2]. The first thermal hydrogen desorption peak from a hydrogen passivated Si surface in vacuum or inert gas ambient can be detected at around 380°C [3,4]. Simultaneously the combination of the hydrogen atoms of neighboring dihydrides generates a pair of dangling bonds. At around 480-500°C dangling bonds are generated on the silicon surface by desorption of the remaining hydrogen [5]. At that moment the silicon surface becomes extremely reactive.