Three-Step Room Temperature Wet Cleaning Process for Silicon Substrate

Rui Hasebe; Akinobu Teramoto; Tomoyuki Suwa; Rihito Kuroda; Shigetoshi Sugawa; Tadahiro Ohmi

doi:10.4028/www.scientific.net/SSP.145-146.189

Paper Titles

Application of Single-Wafer Wet Cleaning Prior to Epitaxial SiGe Process
p.173

Low Temperature Pre-Epi Treatment: Critical Parameters to Control Interface Contamination
p.177

Silicon Surface Preparation and Passivation by Vapor Phase of Heavy Water
p.181

Defects of Silicon Substrates Caused by Electro-Static Discharge in Single Wafer Cleaning Process
p.185

Three-Step Room Temperature Wet Cleaning Process for Silicon Substrate
p.189

Effect of Wet Treatment on Stability of Spin-On Dielectrics for STI Gap-Filling in Nanoscale Memory
p.193

Influence of Wet Cleaning on Tungsten Deposited with Different Techniques
p.197

Etch Rate Study of Germanium, GaAs and InGaAs: A Challenge in Semiconductor Processing
p.203

Poly-Silicon Etch with Diluted Ammonia: Application to Replacement Gate Integration Scheme
p.207

HomeSolid State PhenomenaSolid State Phenomena Vols. 145-146Three-Step Room Temperature Wet Cleaning Process...

Three-Step Room Temperature Wet Cleaning Process for Silicon Substrate

Abstract:

With a progress of device dimension miniaturization, an ultraclean wafer surface is continuously increasing its importance crucial for high quality processing in Silicon Technologies [1]-[8]. Cleaning of silicon wafer surface has been accomplished by RCA wet cleaning in the past [9], where there exists high temperature processes consisting of H2SO4/H2O2/H2O, NH4OH/H2O2/H2O and HCl/H2O2/H2O treatments. Thus, RCA cleaning requires a large number of processing steps, resulting in the consumption of a huge volume of liquid chemicals and UPW, and simultaneously consuming a large volume of clean air exhaust to suppress chemical vapor from getting into the clean room. Moreover, RCA cleaning is used at high temperature and contain alkali solutions, which increase the roughness of the silicon wafer surface [10].