Etch Rate Study of Germanium, GaAs and InGaAs: A Challenge in Semiconductor Processing

Abstract:

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The Si transistor has dominated the semiconductor industry for decades. However, to fulfill the demands of Moore’s law, the Si transistor has been pushed to its physical limits. Introducing new materials with higher intrinsic carrier mobility is one way to solve this problem. Ge, GaAs and InGaAs are known for their high mobilities and are therefore suitable candidates for replacing Si as a channel material. However, introduction of new materials raises new issues. For Si processing, several steps such as cleaning, etching and stripping are based on wet treatments. The knowledge of etch rates of the semiconductor material is of great importance. In this paper, etch rates of Ge, GaAs and InGaAs in several chemical solutions are studied. A comparison of the etch rates is made between the materials.

Info:

Periodical:

Solid State Phenomena (Volumes 145-146)

Edited by:

Paul Mertens, Marc Meuris and Marc Heyns

Pages:

203-206

DOI:

10.4028/www.scientific.net/SSP.145-146.203

Citation:

S. Sioncke et al., "Etch Rate Study of Germanium, GaAs and InGaAs: A Challenge in Semiconductor Processing", Solid State Phenomena, Vols. 145-146, pp. 203-206, 2009

Online since:

January 2009

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$35.00

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