Etch Rate Study of Germanium, GaAs and InGaAs: A Challenge in Semiconductor Processing

Sonja Sioncke; David P. Brunco; Marc Meuris; Olivier Uwamahoro; Jan Van Steenbergen; Evi Vrancken; Marc Heyns

doi:10.4028/www.scientific.net/SSP.145-146.203

Paper Titles

Defects of Silicon Substrates Caused by Electro-Static Discharge in Single Wafer Cleaning Process
p.185

Three-Step Room Temperature Wet Cleaning Process for Silicon Substrate
p.189

Effect of Wet Treatment on Stability of Spin-On Dielectrics for STI Gap-Filling in Nanoscale Memory
p.193

Influence of Wet Cleaning on Tungsten Deposited with Different Techniques
p.197

Etch Rate Study of Germanium, GaAs and InGaAs: A Challenge in Semiconductor Processing
p.203

Poly-Silicon Etch with Diluted Ammonia: Application to Replacement Gate Integration Scheme
p.207

Advances on 45nm SiGe-Compatible NiPt Salicide Process
p.211

Impact of Galvanic Corrosion on Metal Gate Stacks
p.215

Photoresist Adhesion during Wet Etch on Single Wafer Tool
p.219

HomeSolid State PhenomenaSolid State Phenomena Vols. 145-146Etch Rate Study of Germanium, GaAs and InGaAs: A...

Etch Rate Study of Germanium, GaAs and InGaAs: A Challenge in Semiconductor Processing

Abstract:

The Si transistor has dominated the semiconductor industry for decades. However, to fulfill the demands of Moore’s law, the Si transistor has been pushed to its physical limits. Introducing new materials with higher intrinsic carrier mobility is one way to solve this problem. Ge, GaAs and InGaAs are known for their high mobilities and are therefore suitable candidates for replacing Si as a channel material. However, introduction of new materials raises new issues. For Si processing, several steps such as cleaning, etching and stripping are based on wet treatments. The knowledge of etch rates of the semiconductor material is of great importance. In this paper, etch rates of Ge, GaAs and InGaAs in several chemical solutions are studied. A comparison of the etch rates is made between the materials.