Advances on 45nm SiGe-Compatible NiPt Salicide Process

Abstract:

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NiPt self-aligned silicide (salicide) has become a major candidate for the 45nm node due to its better thermal stability and the surface morphology of NiSi on Si substrate [1,2]. SiGe has been proposed for PMOS strain engineering [3]. The relevant SiGe oxidation behavior [4], reaction with platinum [5] and thermal stress behavior [6] are important factors in developing a process for 45nm NiPt salicide over SiGe stressor. These concerns require the review of the current process for NiPt to verify its compatibility and extendibility.

Info:

Periodical:

Solid State Phenomena (Volumes 145-146)

Edited by:

Paul Mertens, Marc Meuris and Marc Heyns

Pages:

211-214

DOI:

10.4028/www.scientific.net/SSP.145-146.211

Citation:

Y. W. Chen et al., "Advances on 45nm SiGe-Compatible NiPt Salicide Process", Solid State Phenomena, Vols. 145-146, pp. 211-214, 2009

Online since:

January 2009

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Price:

$35.00

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