Advances on 45nm SiGe-Compatible NiPt Salicide Process

Yi Wei Chen; Nien Ting Ho; Jerander Lai; T.C. Tsai; C.C. Huang; S.F. Tzou; James M.M. Chu

doi:10.4028/www.scientific.net/SSP.145-146.211

Paper Titles

Effect of Wet Treatment on Stability of Spin-On Dielectrics for STI Gap-Filling in Nanoscale Memory
p.193

Influence of Wet Cleaning on Tungsten Deposited with Different Techniques
p.197

Etch Rate Study of Germanium, GaAs and InGaAs: A Challenge in Semiconductor Processing
p.203

Poly-Silicon Etch with Diluted Ammonia: Application to Replacement Gate Integration Scheme
p.207

Advances on 45nm SiGe-Compatible NiPt Salicide Process
p.211

Impact of Galvanic Corrosion on Metal Gate Stacks
p.215

Photoresist Adhesion during Wet Etch on Single Wafer Tool
p.219

Surface Texturization and Interface Passivation of Mono-Crystalline Silicon Substrates by Wet Chemical Treatments
p.223

Mechanism of Plasma-Less Gaseous Etching Process for Damaged Oxides from the Ion Implantation Process
p.227

HomeSolid State PhenomenaSolid State Phenomena Vols. 145-146Advances on 45nm SiGe-Compatible NiPt Salicide...

Advances on 45nm SiGe-Compatible NiPt Salicide Process

Abstract:

NiPt self-aligned silicide (salicide) has become a major candidate for the 45nm node due to its better thermal stability and the surface morphology of NiSi on Si substrate [1,2]. SiGe has been proposed for PMOS strain engineering [3]. The relevant SiGe oxidation behavior [4], reaction with platinum [5] and thermal stress behavior [6] are important factors in developing a process for 45nm NiPt salicide over SiGe stressor. These concerns require the review of the current process for NiPt to verify its compatibility and extendibility.