Advances on 45nm SiGe-Compatible NiPt Salicide Process
NiPt self-aligned silicide (salicide) has become a major candidate for the 45nm node due to its better thermal stability and the surface morphology of NiSi on Si substrate [1,2]. SiGe has been proposed for PMOS strain engineering . The relevant SiGe oxidation behavior , reaction with platinum  and thermal stress behavior  are important factors in developing a process for 45nm NiPt salicide over SiGe stressor. These concerns require the review of the current process for NiPt to verify its compatibility and extendibility.
Paul Mertens, Marc Meuris and Marc Heyns
Y. W. Chen et al., "Advances on 45nm SiGe-Compatible NiPt Salicide Process", Solid State Phenomena, Vols. 145-146, pp. 211-214, 2009