Photoresist Adhesion during Wet Etch on Single Wafer Tool

Philippe Garnier; B. Pernet; Y. Gomez; C. Duluard; Alphonse Torres; David Barge; M. Gatefait; Didier Lévy

doi:10.4028/www.scientific.net/SSP.145-146.219

Paper Titles

Etch Rate Study of Germanium, GaAs and InGaAs: A Challenge in Semiconductor Processing
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Advances on 45nm SiGe-Compatible NiPt Salicide Process
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Impact of Galvanic Corrosion on Metal Gate Stacks
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Photoresist Adhesion during Wet Etch on Single Wafer Tool
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Surface Texturization and Interface Passivation of Mono-Crystalline Silicon Substrates by Wet Chemical Treatments
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Mechanism of Plasma-Less Gaseous Etching Process for Damaged Oxides from the Ion Implantation Process
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Current Advances in Anhydrous HF/Organic Solvent Processing of Semiconductor Surfaces
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Co-Solvent Effect on the HF/CO₂ Dry Etching of Sacrificial Oxides
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Photoresist Adhesion during Wet Etch on Single Wafer Tool

Abstract:

Integrating multiple gate oxides on a same die requires a proper definition of their respective active area (fig. 1). First the thick gate oxide is grown, and covered by some photoresist. Then a wet etch removes this oxide on the die areas where the resist has been developed. Finally, after resist stripping and surface cleaning, the thin gate oxide is grown. The interaction between the thick oxide surface, the resist and the etchant makes the wet etch challenging. This paper deals with some characterizations and solutions to improve this process.