Co-Solvent Effect on the HF/CO2 Dry Etching of Sacrificial Oxides

Jae Hyun Bae; Jae Mok Jung; Kwon Taek Lim

doi:10.4028/www.scientific.net/SSP.145-146.235

Paper Titles

Photoresist Adhesion during Wet Etch on Single Wafer Tool
p.219

Surface Texturization and Interface Passivation of Mono-Crystalline Silicon Substrates by Wet Chemical Treatments
p.223

Mechanism of Plasma-Less Gaseous Etching Process for Damaged Oxides from the Ion Implantation Process
p.227

Current Advances in Anhydrous HF/Organic Solvent Processing of Semiconductor Surfaces
p.231

Co-Solvent Effect on the HF/CO₂ Dry Etching of Sacrificial Oxides
p.235

A Novel Vapor Phase Etching Process for Si
p.239

Material Loss Impact on Device Performance for 32nm CMOS and Beyond
p.245

Evaluation of Plasma Strip Induced Substrate Damage
p.249

Post Extension Ion Implant Photo Resist Strip for 32 nm Technology and beyond
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HomeSolid State PhenomenaSolid State Phenomena Vols. 145-146Co-Solvent Effect on the HF/CO2 Dry Etching of...

Co-Solvent Effect on the HF/CO₂ Dry Etching of Sacrificial Oxides

Abstract:

In this work, we studied HF/scCO2 dry etching processes with various co-solvents for the purpose of reducing the residues. The effect of co-solvent on etch rate and selectivity was also investigated.

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Periodical:

Solid State Phenomena (Volumes 145-146)

Pages:

235-238

DOI:

https://doi.org/10.4028/www.scientific.net/SSP.145-146.235

Citation:

Cite this paper

Online since:

January 2009

Authors:

Jae Hyun Bae, Jae Mok Jung, Kwon Taek Lim

Keywords:

BPSG, Etching, HF, Residue, Sacrificial Oxide, Supercrititcal CO₂

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