Effect of Wet Treatment on Stability of Spin-On Dielectrics for STI Gap-Filling in Nanoscale Memory

Gyu Hyun Kim; Soon Young Park; Seung Seok Pyo; Ji Hye Han; Jung Nam Kim; Kee Joon Oh; Choon Kun Ryu; Yong Soo Choi; Noh Jung Kwak; Sung Ki Park

doi:10.4028/www.scientific.net/SSP.145-146.193

Paper Titles

Low Temperature Pre-Epi Treatment: Critical Parameters to Control Interface Contamination
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Defects of Silicon Substrates Caused by Electro-Static Discharge in Single Wafer Cleaning Process
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Three-Step Room Temperature Wet Cleaning Process for Silicon Substrate
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Effect of Wet Treatment on Stability of Spin-On Dielectrics for STI Gap-Filling in Nanoscale Memory
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Influence of Wet Cleaning on Tungsten Deposited with Different Techniques
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Etch Rate Study of Germanium, GaAs and InGaAs: A Challenge in Semiconductor Processing
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Poly-Silicon Etch with Diluted Ammonia: Application to Replacement Gate Integration Scheme
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Advances on 45nm SiGe-Compatible NiPt Salicide Process
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HomeSolid State PhenomenaSolid State Phenomena Vols. 145-146Effect of Wet Treatment on Stability of Spin-On...

Effect of Wet Treatment on Stability of Spin-On Dielectrics for STI Gap-Filling in Nanoscale Memory

Abstract:

As a design rule of memory devices is scaled down to sub-100 nm, shallow trench isolation (STI) technology is faced with gap-filling problem in case of CVD oxide and O3-TEOS oxide processes. To overcome the gap-filling problem, a perhydropolysilazane (PHPS) based spin-on dielectric (SOD) has been implemented for nanoscale devices because of self-planarization and excellent gap-filling property [1]. However, the stability of the SOD has been concerned about because it has relatively softer and more porous than conventional HDP oxide. In this paper, we report the effect of wet oxidant treatment on the stability of the SOD for STI gap-filling.