Defects of Silicon Substrates Caused by Electro-Static Discharge in Single Wafer Cleaning Process

Yoshiya Hagimoto; Hayato Iwamoto; Yasushi Honbe; Takuro Fukunaga; Hitoshi Abe

doi:10.4028/www.scientific.net/SSP.145-146.185

Paper Titles

Preparation and Characterization of Self-Assembled Monolayers on Germanium Surfaces
p.169

Application of Single-Wafer Wet Cleaning Prior to Epitaxial SiGe Process
p.173

Low Temperature Pre-Epi Treatment: Critical Parameters to Control Interface Contamination
p.177

Silicon Surface Preparation and Passivation by Vapor Phase of Heavy Water
p.181

Defects of Silicon Substrates Caused by Electro-Static Discharge in Single Wafer Cleaning Process
p.185

Three-Step Room Temperature Wet Cleaning Process for Silicon Substrate
p.189

Effect of Wet Treatment on Stability of Spin-On Dielectrics for STI Gap-Filling in Nanoscale Memory
p.193

Influence of Wet Cleaning on Tungsten Deposited with Different Techniques
p.197

Etch Rate Study of Germanium, GaAs and InGaAs: A Challenge in Semiconductor Processing
p.203

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Defects of Silicon Substrates Caused by Electro-Static Discharge in Single Wafer Cleaning Process

Abstract:

While batch wafer cleaning processes have been conventionally used in the semiconductor manufacturing for many years, the use of single wafer cleaning processes in the manufacturing has recently become increasingly widespread. Single wafer cleaning processes have the advantages of reducing particle and metal contamination, however, electric charge or electrostatic discharge phenomena occurring in these processes causes serious problems such as device destruction through insulation failure and circuit disconnection [1,2]. Well-known examples are the breakdown of the ultra-thin gate oxide and the dissolution of Cu wiring due to charging-up damage in de-ionized water rinsing, which occur during the single wafer wet cleaning process in semiconductor manufacturing. We investigated the problem of wafer defects caused by electrostatic discharge and characterized them using transmission electron microscope (TEM) and energy dispersive X-ray (EDX) analyses.