Single Wafer Ozone-Based Processing for Effective Edge Fluoropolymer Cleaning

John Niccoli; Matt Cogrono; Michelle Eastlack; Dave McCane; Craig Carlson; Erik Young; Dave Chapek

doi:10.4028/www.scientific.net/SSP.145-146.155

Paper Titles

Monitoring System for Airborne Molecular Contamination (AMC) in Semiconductor Manufacturing Areas and Micro-Environments
p.135

Reduction of Airborne Molecular Contamination on 300 mm Front Opening Unified POD (FOUP) and Wafers Surface by Vacuum Technology
p.139

Study of the Volatile Organic Contaminants Absorption and their Reversible Outgassing by FOUPs
p.143

Prevention of Condensation Defects on Contact Patterns by Improving Rinse Process
p.151

Single Wafer Ozone-Based Processing for Effective Edge Fluoropolymer Cleaning
p.155

Cleanliness Management in Advanced Microelectronic
p.159

Surface Preparation and Passivation of III-V Substrates for Future Ultra-High Speed, Low Power Logic Applications
p.165

Preparation and Characterization of Self-Assembled Monolayers on Germanium Surfaces
p.169

Application of Single-Wafer Wet Cleaning Prior to Epitaxial SiGe Process
p.173

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Single Wafer Ozone-Based Processing for Effective Edge Fluoropolymer Cleaning

Abstract:

The interaction between photo resist and highly polymerizing dry etch chemistries results in the deposition of fluoropolymers on the bevel and edge of silicon wafers. These polymers are inert to most aqueous processing chemicals, but exposure to HF lifts these polymers off the bevel. This results in migration of defects to the face of the wafers. The defects are generally found within 50mm from the edge of the wafer.