Single Wafer Ozone-Based Processing for Effective Edge Fluoropolymer Cleaning
The interaction between photo resist and highly polymerizing dry etch chemistries results in the deposition of fluoropolymers on the bevel and edge of silicon wafers. These polymers are inert to most aqueous processing chemicals, but exposure to HF lifts these polymers off the bevel. This results in migration of defects to the face of the wafers. The defects are generally found within 50mm from the edge of the wafer.
Paul Mertens, Marc Meuris and Marc Heyns
J. Niccoli et al., "Single Wafer Ozone-Based Processing for Effective Edge Fluoropolymer Cleaning", Solid State Phenomena, Vols. 145-146, pp. 155-158, 2009