Single Wafer Ozone-Based Processing for Effective Edge Fluoropolymer Cleaning

Abstract:

Article Preview

The interaction between photo resist and highly polymerizing dry etch chemistries results in the deposition of fluoropolymers on the bevel and edge of silicon wafers. These polymers are inert to most aqueous processing chemicals, but exposure to HF lifts these polymers off the bevel. This results in migration of defects to the face of the wafers. The defects are generally found within 50mm from the edge of the wafer.

Info:

Periodical:

Solid State Phenomena (Volumes 145-146)

Edited by:

Paul Mertens, Marc Meuris and Marc Heyns

Pages:

155-158

DOI:

10.4028/www.scientific.net/SSP.145-146.155

Citation:

J. Niccoli et al., "Single Wafer Ozone-Based Processing for Effective Edge Fluoropolymer Cleaning", Solid State Phenomena, Vols. 145-146, pp. 155-158, 2009

Online since:

January 2009

Export:

Price:

$35.00

In order to see related information, you need to Login.

In order to see related information, you need to Login.