Reduction of Airborne Molecular Contamination on 300 mm Front Opening Unified POD (FOUP) and Wafers Surface by Vacuum Technology

Abstract:

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With decreasing critical size of micro-electronic fabrication imposed by ITRS today, Front Opening Unified Pod (FOUP) has been designed to transport the silicon wafers in the 300 mm semiconductor fab to decrease the particles contamination, without taking the Airborne Molecular Contamination (AMC) and moisture problems into account. Various methods of AMC decontamination methods has been introduced in past, such as purging mini-environment with nitrogen, however the efficiency of its yield improvement capacity has not been proven. An ultimate AMC decontamination method with vacuum decontamination and passivation technology shows a very good efficiency on the AMC removal mechanism, with a direct impact on the yield improvement.

Info:

Periodical:

Solid State Phenomena (Volumes 145-146)

Edited by:

Paul Mertens, Marc Meuris and Marc Heyns

Pages:

139-142

DOI:

10.4028/www.scientific.net/SSP.145-146.139

Citation:

P. Maquin and H. Kambara, "Reduction of Airborne Molecular Contamination on 300 mm Front Opening Unified POD (FOUP) and Wafers Surface by Vacuum Technology", Solid State Phenomena, Vols. 145-146, pp. 139-142, 2009

Online since:

January 2009

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Price:

$35.00

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