Reduction of Airborne Molecular Contamination on 300 mm Front Opening Unified POD (FOUP) and Wafers Surface by Vacuum Technology

Philippe Maquin; Hisanori Kambara

doi:10.4028/www.scientific.net/SSP.145-146.139

Paper Titles

Molybdenum Contamination in Silicon: Detection and Impact on Device Performances
p.123

Developing a High Volume Manufacturing Wet Clean Process to Remove BF₂ Implant Induced Molybdenum Contamination
p.127

Impact of Metal-Ion Contaminated Silica Particles on Gate Oxide Integrity
p.131

Monitoring System for Airborne Molecular Contamination (AMC) in Semiconductor Manufacturing Areas and Micro-Environments
p.135

Reduction of Airborne Molecular Contamination on 300 mm Front Opening Unified POD (FOUP) and Wafers Surface by Vacuum Technology
p.139

Study of the Volatile Organic Contaminants Absorption and their Reversible Outgassing by FOUPs
p.143

Prevention of Condensation Defects on Contact Patterns by Improving Rinse Process
p.151

Single Wafer Ozone-Based Processing for Effective Edge Fluoropolymer Cleaning
p.155

Cleanliness Management in Advanced Microelectronic
p.159

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Reduction of Airborne Molecular Contamination on 300 mm Front Opening Unified POD (FOUP) and Wafers Surface by Vacuum Technology

Abstract:

With decreasing critical size of micro-electronic fabrication imposed by ITRS today, Front Opening Unified Pod (FOUP) has been designed to transport the silicon wafers in the 300 mm semiconductor fab to decrease the particles contamination, without taking the Airborne Molecular Contamination (AMC) and moisture problems into account. Various methods of AMC decontamination methods has been introduced in past, such as purging mini-environment with nitrogen, however the efficiency of its yield improvement capacity has not been proven. An ultimate AMC decontamination method with vacuum decontamination and passivation technology shows a very good efficiency on the AMC removal mechanism, with a direct impact on the yield improvement.