Molecular Simulation on Interfacial Structure and Gettering Efficiency of Si (110)/(100) Directly Bonded Hybrid Crystal Orientation Substrates

Abstract:

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Hybrid crystal orientation technology (HOT) substrates comprised of Si (100) and (110) surface orientation paralleling each <110> direction attract considerable attentions as one of the promising technology for high performance bulk CMOS technology. Although HOT substrates are fabricated by wafer bonding of Si (110) and Si (100) surfaces, it is not clear the atomic configuration of interfacial structure. Furthermore, the possibility for the interface to be an effective gettering source of impurity metals was not well studied. In this paper, we studied the interfacial structure and gettering efficiency of the atomic bonded interface by molecular simulations. The results indicate that the simulated atomic configuration and gettering efficiency of the bonded interface agreed well with the experimental results.

Info:

Periodical:

Solid State Phenomena (Volumes 156-158)

Edited by:

M. Kittler and H. Richter

Pages:

199-204

DOI:

10.4028/www.scientific.net/SSP.156-158.199

Citation:

H. Kariyazaki et al., "Molecular Simulation on Interfacial Structure and Gettering Efficiency of Si (110)/(100) Directly Bonded Hybrid Crystal Orientation Substrates", Solid State Phenomena, Vols. 156-158, pp. 199-204, 2010

Online since:

October 2009

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Price:

$35.00

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