A versatile numerical tool for the simulation of electrical properties of a semiconductor such as minority carrier lifetimes and photoconductivity as a function of defect parameters was developed. Unlike the SRH-model this tool enables to simulate e.g. different measurement conditions and even trapping effects. Contrary to the widely used simulation tool PC1D also non-steady state solutions can be obtained. Furthermore the novel contact less method MDP is presented. Using the example of iron determination the new possibilities arising from combining the novel simulation tool and the method MDP are shown. Simulations for different trapping densities and measurement conditions were executed and exemplary measurements of the trap density and the cross-over point of mc-Si wafers were performed. It was found, that the cross-over point and the sensitivity of iron determination at low level injections is effected by trapping and the chosen non- or steady state measurement conditions.