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HomeSolid State PhenomenaSolid State Phenomena Vols. 156-158Impurity Engineering of Czochralski Silicon

Impurity Engineering of Czochralski Silicon

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Abstract:

The novel concept of “impurity engineering in CZochralski (CZ) silicon ” for large scaled integrated circuits has been reviewed. By doping with a certain impurities into CZ silicon materials intentionally, such as nitrogen (N), germanium (Ge) and even carbon (C, with high concentration), internal gettering ability of CZ silicon wafers could be improved. Meanwhile, void defects in CZ silicon wafer could be easily eliminated during annealing at higher temperatures. Furthermore, it was also found that the mechanical strength could be increased, so that breakage of wafers decreased. Thus, it is believed that by impurity engineering CZ silicon wafers can satisfy the requirment of ultra large scale integrated circuits.

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Gettering and Defect Engineering in Semiconductor Technology XIII

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Solid State Phenomena (Volumes 156-158)

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261-267

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https://doi.org/10.4028/www.scientific.net/SSP.156-158.261

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Online since:

October 2009

Authors:

Jia He Chen, Xiang Yang Ma, De Ren Yang

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Czochralski Silicon, Defect, Impurity Engineering

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© 2010 Trans Tech Publications Ltd. All Rights Reserved

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