The Role of the Interstitial Oxygen in the Recovery and Evolution of the Boron Implantation Damage

Isabella Mica; Maria Luisa Polignano; F. Cazzaniga; L. Di Piazza; M. Mariani; E. Ricci; F. Sammiceli; S. Speranza

doi:10.4028/www.scientific.net/SSP.156-158.269

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HomeSolid State PhenomenaSolid State Phenomena Vols. 156-158The Role of the Interstitial Oxygen in the...

The Role of the Interstitial Oxygen in the Recovery and Evolution of the Boron Implantation Damage

Abstract:

The recovery of the boron implantation damage can be very difficult. Depending on the energy and the dose many dislocations are generated at the projected range of the boron implantation. The morphology of these dislocations depends on the silicon substrate. In this work we demonstrate that the interstitial oxygen concentration ([Oi]) is related with the dislocation dimension, density end morphology. Particularly long dislocation dipoles were generated by the boron implantation in substrate with interstitial oxygen, and their density is connected with the [Oi] concentration.

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Periodical:

Solid State Phenomena (Volumes 156-158)

Pages:

269-274

DOI:

https://doi.org/10.4028/www.scientific.net/SSP.156-158.269

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Online since:

October 2009

Authors:

Isabella Mica, Maria Luisa Polignano, F. Cazzaniga, L. Di Piazza, M. Mariani, E. Ricci, F. Sammiceli, S. Speranza

Keywords:

Boron, CZ Silicon Wafer, Defect Formation, Interstitial Oxygen, Ion Implantation

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