Study of the Mechanisms of Oxygen Precipitation in RTA Annealed Cz-Si Wafers

Abstract:

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In this paper, the influence of the rapid thermal annealing of single crystalline Cz-Si wafers on the evolution of the concentration of interstitial oxygen as well as oxygen in precipitated oxide phase was investigated by infrared spectroscopy. The wafers were preliminary furnace annealed to create the precipitate seeds. The concentration of interstitial oxygen was shows to decrease considerably as a result of annealing during up to 40 min together with the growth of the concentration of precipitated oxygen. This effect depended on the purity and defect structure of initial wafers. The kinetic model was developed to account for the observed effects based on the modification of the solubility level for interstitial oxygen induced by defects as well as its diffusivity. Obtained results of simulation agree well with the experimental data.

Info:

Periodical:

Solid State Phenomena (Volumes 156-158)

Edited by:

M. Kittler and H. Richter

Pages:

279-282

DOI:

10.4028/www.scientific.net/SSP.156-158.279

Citation:

V.G. Litovchenko et al., "Study of the Mechanisms of Oxygen Precipitation in RTA Annealed Cz-Si Wafers", Solid State Phenomena, Vols. 156-158, pp. 279-282, 2010

Online since:

October 2009

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Price:

$35.00

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