Simulation of XBIC Contrast of Precipitates in Si

Eugene B. Yakimov

doi:10.4028/www.scientific.net/SSP.156-158.247

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HomeSolid State PhenomenaSolid State Phenomena Vols. 156-158Simulation of XBIC Contrast of Precipitates in Si

Simulation of XBIC Contrast of Precipitates in Si

Abstract:

Simulation of contrast for small spherical defects in the X-ray beam-induced current (XBIC) mode has been carried out. Under simulations the excess carrier generation function is described by the rigid cylinder with the constant generation rate inside it. The dependence of maximum contrast value on the precipitate depth, diffusion length and effective beam radius is calculated. The XBIC contrast profile as a function of diffusion length, of beam radius and of precipitate depth has been calculated that allows to evaluate the spatial resolution of the technique. The results obtained are compared with those calculated for the EBIC contrast of the same defect. It is shown that in the semiconductor materials with the small diffusion length the XBIC contrast could be comparable with the EBIC one.

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Periodical:

Solid State Phenomena (Volumes 156-158)

Pages:

247-250

DOI:

https://doi.org/10.4028/www.scientific.net/SSP.156-158.247

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Online since:

October 2009

Authors:

Eugene B. Yakimov

Keywords:

Contrast, Diffusion Length, Silicon, Simulation, Spherical Defect, XBIC

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References

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[1] [2] [3] [4] [5] [6] [7] [8] L = 100 µµµµm L = 20 µµµµm zp= 7 µµµµm rb= 1 µµµµm C, a. u. x, µµµµm Fig. 3. Calculated profiles of precipitate XBIC contrast in the y-direction (solid lines) and in the x-direction (dashed lines).

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[2] [4] [6] [8] [10] [12] L=20µµµµm L=100µµµµm FWHM, µµµµm Precipitate depth, µµµµm Fig. 4. Calculated FWHM dependence on depth for precipitate XBIC profile in the ydirection (solid symbols) and in the xdirection (open symbols).

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