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HomeSolid State PhenomenaSolid State Phenomena Vols. 205-206Light-Induced Boron-Oxygen Recombination Centres...

Light-Induced Boron-Oxygen Recombination Centres in Silicon: Understanding their Formation and Elimination

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Abstract:

Lifetime-degrading recombination centres those that emerge in the presence of excess carriers in boron and oxygen containing silicon - show a peculiar dependence on the concentrations of the relevant impurities, B and O, and on the hole concentration p₀ (net doping) in materials that contain compensating donors (phosphorus or Thermal Donors) or added Ga acceptors. The data indicate involvement of both substitutional (B_s) and interstitial (B_i) boron atoms in the major recombination centres observed in p-Si. A suggested model ascribes degradation to the presence of a B_iB_sO latent defect inherited from the thermal history in a recombination-inactive atomic configuration. In the presence of excess electrons, this latent defect reconfigures into a recombination-active centre. The defect concentration dependence on the material parameters is reduced, in some special cases, to a proportionality to p₀ [² or to [ [². The essential feature is an involvement of a fast-diffusing species B_i in the defect. This species can be removed to the boron nanoprecipitates thus eliminating the defects responsible for the degradation.

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Solid State Phenomena (Volumes 205-206)

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3-14

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https://doi.org/10.4028/www.scientific.net/SSP.205-206.3

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Online since:

October 2013

Authors:

Vladimir V. Voronkov, Robert Falster

Keywords:

Boron, Carrier Lifetime, Degradation, Oxygen, Silicon

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© 2014 Trans Tech Publications Ltd. All Rights Reserved

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