Reduction of Structural Defects in Ge Epitaxially Grown on Nano-Structured Si Islands on SOI Substrate

Abstract:

One way to further increase performance and/or functionality of Si micro-and nanoelectronics is the integration of alternative semiconductors on silicon (Si). We studied the Ge/Si heterosystem with the aim to realize a Ge deposition free of misfit dislocations and with low content of other structural defects. Ge nanostructures were selectively grown by chemical vapor deposition on periodic Si nanoislands (dots and lines) on SOI substrate either directly or with a thin (about 10 nm) SiGe buffer layer. The strain state of the structures was measured by different laboratory-based x-ray diffraction techniques. It was found that a suited SiGe buffer improves the compliance of the Si compared to direct Ge deposition; plastic relaxation during growth can be prevented, and fully elastic relaxation of the structure can be achieved. Transmission electron microscopy confirms that the epitaxial growth of Ge on nanostructured Si is free of misfit dislocations.

• Periodical: Solid State Phenomena (Volumes 205-206)
• Pages: 400-405
• DOI: https://doi.org/10.4028/www.scientific.net/SSP.205-206.400
• Online since: October 2013
• Authors: Peter Zaumseil, Yuji Yamamoto, Markus Andreas Schubert, Thomas Schroeder, Bernd Tillack
• Keywords: Germanium, Heteroepitaxy, Nanostructured Si, SOI, TEM, X-Ray Diffraction (XRD)

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