Towards Atomic-Layer-Scale Processing of High Mobility Channel Materials in Acidic Solutions for N5 and N7 Technology Nodes

Dennis H. van Dorp; Sophia Arnauts; Graniel Abrenica; Frank Holsteyns

doi:10.4028/www.scientific.net/SSP.255.51

Paper Titles

Effect of Dilute Hydrogen Peroxide in Ultrapure Water on SiGe Epitaxial Process
p.27

Surface Passivation of New Channel Materials Utilizing Hydrogen Peroxide and Hydrazine Gas
p.31

Tris(Trimethylsilyl)Germane (Me₃Si)₃GeH: A Molecular Model for Sulfur Passivation of Ge(111) Surfaces
p.36

Applications for Surface Engineering Using Atomic Layer Etching - Invited Paper
p.41

Towards Atomic-Layer-Scale Processing of High Mobility Channel Materials in Acidic Solutions for N5 and N7 Technology Nodes
p.51

Comparison of the Chemical Passivation of GaAs, In_0.53Ga_0.47As, and InSb with 1-Eicosanethiol
p.55

Digital Etching of GaAs Materials: Comparison of Oxidation Treatments
p.61

Thin Layer Etching of Silicon Nitride: Comparison of Downstream Plasma, Liquid HF and Gaseous HF Processes for Selective Removal after Light Ion Implantation
p.69

Selective Etching of Silicon Oxide versus Nitride with Low Oxide Etching Rate
p.75

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Towards Atomic-Layer-Scale Processing of High Mobility Channel Materials in Acidic Solutions for N5 and N7 Technology Nodes

Abstract:

In this work the etching kinetics of Ge (100) is studied in acidic solutions containing and oxidizing agent. It is shown that the etch rate in the low etch-rate range is controlled by the concentration of the acid, oxidizing agent and the hydrodynamics of the system. The surface termination during etching has strong impact on the etching kinetics. Finally, we discuss the stability of the Ge (100) surface in water and relate this to the low solubility of the Ge suboxides

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Solid State Phenomena (Volume 255)

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51-54

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https://doi.org/10.4028/www.scientific.net/SSP.255.51

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Online since:

September 2016

Authors:

Dennis H. van Dorp*, Sophia Arnauts, Graniel Abrenica, Frank Holsteyns

Keywords:

Atomic Layer Etching, Channel Materials, Cleaning, Surface Preparation

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