Surface Passivation of New Channel Materials Utilizing Hydrogen Peroxide and Hydrazine Gas

Dan Alvarez Jr; Jeffrey J. Spiegelman; Andrew C. Kummel; Mary Edmonds; Kasra Sardashti; Steven Wolf; Russell Holmes

doi:10.4028/www.scientific.net/SSP.255.31

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Surface Passivation of New Channel Materials Utilizing Hydrogen Peroxide and Hydrazine Gas

Abstract:

In Situ gas phase passivation methods can enable new channel materials. Toward this end pure anhydrous HOOH and H2NNH2 membrane gas delivery methods were developed. Implementation led to Si-OH passivation of InGaAs(001) at 350C and Si-N-H passivation of SiGe(110) at 285C. XPS and initial electrical characterization has been carried out. Feasibility for In Situ dry surface preparation and passivation was demonstrated.