Surface Preparation Quality before Epitaxy our Paper's

Philippe Garnier

doi:10.4028/www.scientific.net/SSP.255.13

Paper Titles

Preface, Committees, Sponsor

Wet Selective SiGe Etch to Enable Ge Nanowire Formation
p.3

Silicon Surface Passivation in HF Solutions for Improved Gate Oxide Reliability
p.8

Surface Preparation Quality before Epitaxy our Paper's
p.13

Study of Oxygen Concentration in TMAH Solution for Improvement of Sigma-Shaped Wet Etching Process
p.18

The Effect of Rinsing a Germanium Surface after Wet Chemical Treatment
p.22

Effect of Dilute Hydrogen Peroxide in Ultrapure Water on SiGe Epitaxial Process
p.27

Surface Passivation of New Channel Materials Utilizing Hydrogen Peroxide and Hydrazine Gas
p.31

Tris(Trimethylsilyl)Germane (Me₃Si)₃GeH: A Molecular Model for Sulfur Passivation of Ge(111) Surfaces
p.36

HomeSolid State PhenomenaSolid State Phenomena Vol. 255Surface Preparation Quality before Epitaxy our...

Surface Preparation Quality before Epitaxy our Paper's

Abstract:

“HF Last” process are widely used as pre epi cleans. They enable a Si-H surface to grow a perfect Si layer by epitaxy. Nonetheless, such hydrophobic wafers are extremely sensitive to watermarks formation during the wafer drying. A design of experiments has been used to determine which parameters impact their formation on a single wafer cleaning tool. Plus, the silicon surface stability has been compared between this tool and an immersion batch cleaning tool.

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Periodical:

Solid State Phenomena (Volume 255)

Pages:

13-17

DOI:

https://doi.org/10.4028/www.scientific.net/SSP.255.13

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Online since:

September 2016

Authors:

Philippe Garnier*

Keywords:

Epitaxy, HF Last, Silicon Surface Passivation, Watermarks

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* - Corresponding Author

References

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