Surface Preparation Quality before Epitaxy our Paper's
“HF Last” process are widely used as pre epi cleans. They enable a Si-H surface to grow a perfect Si layer by epitaxy. Nonetheless, such hydrophobic wafers are extremely sensitive to watermarks formation during the wafer drying. A design of experiments has been used to determine which parameters impact their formation on a single wafer cleaning tool. Plus, the silicon surface stability has been compared between this tool and an immersion batch cleaning tool.
Paul W. Mertens, Marc Meuris and Marc Heyns
P. Garnier, "Surface Preparation Quality before Epitaxy our Paper's", Solid State Phenomena, Vol. 255, pp. 13-17, 2016