Surface Preparation Quality before Epitaxy our Paper's

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“HF Last” process are widely used as pre epi cleans. They enable a Si-H surface to grow a perfect Si layer by epitaxy. Nonetheless, such hydrophobic wafers are extremely sensitive to watermarks formation during the wafer drying. A design of experiments has been used to determine which parameters impact their formation on a single wafer cleaning tool. Plus, the silicon surface stability has been compared between this tool and an immersion batch cleaning tool.

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Periodical:

Solid State Phenomena (Volume 255)

Edited by:

Paul W. Mertens, Marc Meuris and Marc Heyns

Pages:

13-17

Citation:

P. Garnier, "Surface Preparation Quality before Epitaxy our Paper's", Solid State Phenomena, Vol. 255, pp. 13-17, 2016

Online since:

September 2016

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$41.00

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