Silicon Surface Passivation in HF Solutions for Improved Gate Oxide Reliability

Philippe Garnier

doi:10.4028/www.scientific.net/SSP.255.8

Paper Titles

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Study of Oxygen Concentration in TMAH Solution for Improvement of Sigma-Shaped Wet Etching Process
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The Effect of Rinsing a Germanium Surface after Wet Chemical Treatment
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Effect of Dilute Hydrogen Peroxide in Ultrapure Water on SiGe Epitaxial Process
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Surface Passivation of New Channel Materials Utilizing Hydrogen Peroxide and Hydrazine Gas
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Tris(Trimethylsilyl)Germane (Me₃Si)₃GeH: A Molecular Model for Sulfur Passivation of Ge(111) Surfaces
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Silicon Surface Passivation in HF Solutions for Improved Gate Oxide Reliability

Abstract:

The silicon surface passivation with diluted HF solutions is hereby explained. Without a very stable, correct Si-H surface passivation, a rough silicon surface can be obtained, leading to poor gate oxide integrity or bad epi film quality. Detailed mechanism are depicted and solutions to obtain best Si-H passivated surface are given

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Periodical:

Solid State Phenomena (Volume 255)

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8-12

DOI:

https://doi.org/10.4028/www.scientific.net/SSP.255.8

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Online since:

September 2016

Authors:

Philippe Garnier*

Keywords:

Gate Oxide Reliability, HF Based Solutions, Silicon Surface Passivation

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References

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