Wet Selective SiGe Etch to Enable Ge Nanowire Formation

Farid Sebaai; Liesbeth Witters; Frank Holsteyns; Kurt Wostyn; Jens Rip; Yoshida Yukifumi; Ruben R. Lieten; Steven Bilodeau; Emanuel Cooper

doi:10.4028/www.scientific.net/SSP.255.3

Paper Titles

Preface, Committees, Sponsor

Wet Selective SiGe Etch to Enable Ge Nanowire Formation
p.3

Silicon Surface Passivation in HF Solutions for Improved Gate Oxide Reliability
p.8

Surface Preparation Quality before Epitaxy our Paper's
p.13

Study of Oxygen Concentration in TMAH Solution for Improvement of Sigma-Shaped Wet Etching Process
p.18

The Effect of Rinsing a Germanium Surface after Wet Chemical Treatment
p.22

Effect of Dilute Hydrogen Peroxide in Ultrapure Water on SiGe Epitaxial Process
p.27

Surface Passivation of New Channel Materials Utilizing Hydrogen Peroxide and Hydrazine Gas
p.31

Tris(Trimethylsilyl)Germane (Me₃Si)₃GeH: A Molecular Model for Sulfur Passivation of Ge(111) Surfaces
p.36

HomeSolid State PhenomenaSolid State Phenomena Vol. 255Wet Selective SiGe Etch to Enable Ge Nanowire...

Wet Selective SiGe Etch to Enable Ge Nanowire Formation

Abstract:

For the Ge nanowire formation in a gate-all-around (GAA) integration scheme, a selective etch of Si_0.5Ge_0.5 or Si_0.3Ge_0.7 selective to Ge is considered. Two wet process approaches were evaluated: a boiling TMAH as a commodity chemistry is compared with a formulated chemistry using a multi-stack SiGe/Ge layer as a test vehicle. The boiling TMAH exhibits an anisotropic etch of the SiGe whereas the formulated semi-aqueous chemistry removes the sacrificial SiGe by an isotropic etch which makes the process suitable for a Ge nanowire release process.

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Solid State Phenomena (Volume 255)

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3-7

DOI:

https://doi.org/10.4028/www.scientific.net/SSP.255.3

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Online since:

September 2016

Authors:

Farid Sebaai*, Liesbeth Witters, Frank Holsteyns, Kurt Wostyn, Jens Rip, Yoshida Yukifumi, Ruben R. Lieten, Steven Bilodeau, Emanuel Cooper

Keywords:

Alkaline, Alkaline Conditions, CMOS, GAAFETs, Gate-All-Around, Ge Nanowire, Ge Selectivity, Optimized Semi-Aqueous Chemistry, Si_0.3Ge_0.7 Isotropic Etch, Si_0.5Ge_0.5

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References

[1] J. Mitard, 2013 Symposium on VLSI Technology, pT20-T21.

Google Scholar

[2] P. Hashemi, Electron Device Letters 33(2), (2012).

Google Scholar

[3] Isaac Lauer, 2015 Symposium on VLSI Technology, pT140-T141.

Google Scholar

[4] H. Mertens, 2015 Symposium on VLSI Technology, pT142 - T143.

Google Scholar

[5] Yao-Jen Lee, presented at IEDM 2015, Washington DC (Dec 2015).

Google Scholar

[6] K. Wostyn, ECS Transactions, 69 (8) 147-152 (Oct 2015).

Google Scholar

[7] T. K. Carns, Journal of The Electrochemical Society, Vol. 142, No. 4, April (1995).

Google Scholar

[8] B. Holländer, Journal of The Electrochemical Society, 157 _6_ H643-H646 _2010.

Google Scholar

[9] P.H.L. Notten, J.E.A.M. van den Meerakker, J.J. Kelly: Etching of III-V Semiconductors: an Electrochemical Approach, Elsevier Advanced Technology Oxford (1991).

Google Scholar