Preface, Committees, Sponsor
Wet Selective SiGe Etch to Enable Ge Nanowire Formation
p.3
p.3
Silicon Surface Passivation in HF Solutions for Improved Gate Oxide Reliability
p.8
p.8
Surface Preparation Quality before Epitaxy our Paper's
p.13
p.13
Study of Oxygen Concentration in TMAH Solution for Improvement of Sigma-Shaped Wet Etching Process
p.18
p.18
The Effect of Rinsing a Germanium Surface after Wet Chemical Treatment
p.22
p.22
Effect of Dilute Hydrogen Peroxide in Ultrapure Water on SiGe Epitaxial Process
p.27
p.27
Surface Passivation of New Channel Materials Utilizing Hydrogen Peroxide and Hydrazine Gas
p.31
p.31
Tris(Trimethylsilyl)Germane (Me3Si)3GeH: A Molecular Model for Sulfur Passivation of Ge(111) Surfaces
p.36
p.36
Preface, Committees, Sponsor
Abstract:
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Info:
Periodical:
Solid State Phenomena (Volume 255)
Online since:
September 2016
Сopyright:
© 2016 Trans Tech Publications Ltd. All Rights Reserved
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