Effect of Dilute Hydrogen Peroxide in Ultrapure Water on SiGe Epitaxial Process

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Ultrapure water contains dilute hydrogen peroxide as an impurity. In order to clarify an impact of the dilute hydrogen peroxide on cleaning processes, a SiGe epitaxial layer was deposited on a Si(100) wafer which surface was treated by HF last process with hydrogen peroxide contained UPW or hydrogen peroxide removed UPW. The defect in the SiGe epitaxial layer was reduced when the hydrogen peroxide removed UPW was used.

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Periodical:

Solid State Phenomena (Volume 255)

Edited by:

Paul W. Mertens, Marc Meuris and Marc Heyns

Pages:

27-30

Citation:

T. Masaoka et al., "Effect of Dilute Hydrogen Peroxide in Ultrapure Water on SiGe Epitaxial Process", Solid State Phenomena, Vol. 255, pp. 27-30, 2016

Online since:

September 2016

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$38.00

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