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Effect of Dilute Hydrogen Peroxide in Ultrapure Water on SiGe Epitaxial Process

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Abstract:

Ultrapure water contains dilute hydrogen peroxide as an impurity. In order to clarify an impact of the dilute hydrogen peroxide on cleaning processes, a SiGe epitaxial layer was deposited on a Si(100) wafer which surface was treated by HF last process with hydrogen peroxide contained UPW or hydrogen peroxide removed UPW. The defect in the SiGe epitaxial layer was reduced when the hydrogen peroxide removed UPW was used.

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Info:

Periodical:

Solid State Phenomena (Volume 255)

Pages:

27-30

DOI:

https://doi.org/10.4028/www.scientific.net/SSP.255.27

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Online since:

September 2016

Authors:

Toru Masaoka*, Nobuko Gan, Yu Fujimura, Yuichi Ogawa, Kurt Wostyn, Antoine Pacco, Yukifumi Yoshida, Frank Holsteyns

Keywords:

HF Last, Hydrogen Peroxide, Pre-Epi Clean, Silicon (111), Ultrapure Water

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© 2016 Trans Tech Publications Ltd. All Rights Reserved

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References

[1] Y. Miyazaki et al., Advanced Hydrogen Peroxide Removal Technology Using Nano-sized Pt particle Catalyst Supported on Anion Exchange Resin, ULTRAPURE WATER Micro conference (2013).

Google Scholar

[2] V. Libman et al., UPW ITRS and SEMI: Synergy of Enabling Advanced Existing and Future Technologies, ULTRAPURE WATER Micro conference (2015).

Google Scholar

[3] V. Libman et al., ECS Transactions, 69 (8), 17-28 (2015).

Google Scholar

[4] Y. Yoshida et al., ECS Transactions, 69(8), 29-35 (2015).

Google Scholar

[5] K. Sano et al., Solid State Phenomena, 145, 173-176 (2009).

Google Scholar

[6] Karen A. Reinhardt and Werner Kern, Handbook of Silicon Wafer Cleaning Technology, (2008).

Google Scholar

[7] K. Wostyn et al., Solid State Phenomena, 219, 20-23 (2015).

Google Scholar

[8] K. Wostyn et al., ECS Transactions, 64(6) 989-995 (2014).

Google Scholar

[9] Wang et al. J. Electrochem. Soc., 143, 2387 (1996).

Google Scholar

[10] M.A. Hines, Annu Rev Phys Chem., 54, 29-56 (2003).

Google Scholar

[11] Karen A. Reinhardt and Richard F. Reidy, Handbook of cleaning for semiconductor manufacturing, (2011).

Google Scholar

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