Effect of Dilute Hydrogen Peroxide in Ultrapure Water on SiGe Epitaxial Process
Ultrapure water contains dilute hydrogen peroxide as an impurity. In order to clarify an impact of the dilute hydrogen peroxide on cleaning processes, a SiGe epitaxial layer was deposited on a Si(100) wafer which surface was treated by HF last process with hydrogen peroxide contained UPW or hydrogen peroxide removed UPW. The defect in the SiGe epitaxial layer was reduced when the hydrogen peroxide removed UPW was used.
Paul W. Mertens, Marc Meuris and Marc Heyns
T. Masaoka et al., "Effect of Dilute Hydrogen Peroxide in Ultrapure Water on SiGe Epitaxial Process", Solid State Phenomena, Vol. 255, pp. 27-30, 2016