Study of Properties of Multicomponent Heterostructures Based on AIIIBV Compounds

Article Preview

Abstract:

Complex analysis of the quality of the surface of the multicomponent epitaxial layers AIIIBV compounds grown at the different conditions of temperature gradient zone recrystallization was performed. Main parameters that determine the quality of the surface and structural perfection of multicomponent heterostructures AlInGaPAs / GaAs have been found: the temperature gradient, the composition of the solution-melt, subcooling, matching the lattice parameters and the CTE of the layer and the substrate, the substrate orientation.

You might also be interested in these eBooks

Info:

Periodical:

Solid State Phenomena (Volume 265)

Pages:

728-733

Citation:

Online since:

September 2017

Export:

Price:

Permissions CCC:

Permissions PLS:

Сopyright:

© 2017 Trans Tech Publications Ltd. All Rights Reserved

Share:

Citation:

* - Corresponding Author

[1] S. Mukai, H. Jajima, S. Janagisawa, N. Kutsuwada, Liquid phase epitaxial growth of AlGaInPAs lattice matched to GaAs, Appl. Phys. Lett., 44(9) (1984) 904-906.

DOI: 10.1063/1.94929

Google Scholar

[2] Zh.I. Alferov, V.M. Andreev. V.D. Rumyantsev, Concentrator Photovoltaic, Optical Sciences, 130, 25 (2007).

Google Scholar

[3] P. Mukherjee, S.J. Lim, T.P. Wrobel, R. Bhargava, A.M. Smith, Measuring and Predicting the Internal Structure of Semiconductor Nanocrystals through Raman Spectroscopy, Journal of the American Chemical Society, 138(34) 10887-10896.

DOI: 10.1021/jacs.6b03907

Google Scholar

[4] B.A. Kalin, N.V. Volkov, R.A. Valikov, A.S. Yashin, T.V. Yakutkina, The multicomponent doping of surface layers of materials under the influence of ion beams with a broad energy spectrum, IOP Conference Series: Materials Science and Engineering, (2016).

DOI: 10.1088/1757-899x/130/1/012039

Google Scholar

[5] D.L. Alfimova, L.S. Lunin, M.L. Lunina, A.S. Pashchenko, S.N. Chebotarev, Growth and properties of GaInPSbAs isoperiodic solid solutions on indium arsenide substrates, Physics of the Solid State, 58(9) (2016) 1751-1757.

DOI: 10.1134/s1063783416090055

Google Scholar

[6] S.N. Chebotarev, A.S. Pashchenko, L.S. Lunin, V.A. Irkha, Regularities of ion-beam-induced crystallization and properties of InAs-QD/GaAs(001) semiconductor nanoheterostructures, Nanotechnologies in Russia, 11 (7-8) (2016) 435-443.

DOI: 10.1134/s1995078016040030

Google Scholar

[7] A.S. Pashchenko, S.N. Chebotarev, L.S. Lunin, V.A. Irkha, Specific features of doping with antimony during the ion-beam crystallization of silicon, Semiconductors, 50(4) (2016) 545-548.

DOI: 10.1134/s1063782616040199

Google Scholar

[8] Y.I. Kretova, Modern aspects of modeling of technological processes to solve problems of increasing energy and resource efficiency of food production, Procedia Engineering, 1 (2015) 294-299.

DOI: 10.1016/j.proeng.2015.12.065

Google Scholar

[9] A.N. Dil'din, I.V. Chumanov, V.I. Chumanov, V.E. Eremyashev, E.A. Trofimov, A.A. Kirsanova, Liquid-phase reduction of steelmaking wastes, Metallurgist, 59 (2016)1024-1029.

DOI: 10.1007/s11015-016-0210-1

Google Scholar

[10] V.M. Schastlivtsev, Yu.V. Kaletina, E.A. Fokina, D.A. Mirzaev, Effect of External Actions and a Magnetic Field on Martensitic Transformation in Steels and Alloys, Metal Science and Heat Treatment, 58(5) (2016) 247-253.

DOI: 10.1007/s11041-016-9997-4

Google Scholar

[11] A.T. Bekker, N.Y. Tsimbelman, T.I. Chernova, V.D. Bruss, O. Bilgin, Interface Friction Parameters for the Mathematical Modeling of Shell Structures with Infill, Proceedings of the Twenty-fifth International Ocean and Polar Engineering Conference (ISOPE -2015) Kona, Big Island, Hawaii, USA, (2015).

Google Scholar

[12] V.P. Reva, A.E. Filatenkov, Y.N. Mansurov, V.G. Kuryavyi, Thermal stability of multilayer carbon nanotubes produced by the mechanical activation of amorphous carbon. / Coke and Chemistry, 57 (11) (2014) 444-447.

DOI: 10.3103/s1068364x14110088

Google Scholar

[13] V.P. Reva, Y.N. Mansurov, V.G. Kuryavyi, V.V. Petrov, V.A. Kim, Plate Manufacturing Technology for a Sectional Tool Made of Tungsten-Cobalt Hard Alloy, Chemical and Petroleum Engineering, (2016) 1-4.

DOI: 10.1007/s10556-016-0148-y

Google Scholar

[14] S.N. Chebotarev, A.S. Pashchenko, L.S. Lunin, V.A. Irkha, Mass transfer of semiconductors at low flow argon ion beam sputtering, International Journal of Applied Engineering Research, 11(3) (2016) 1622-1629.

Google Scholar

[15] L.S. Lunin, B.M. Seredin, L.M. Seredin, Abrasive blasting of silicon surfaces during the thermal-migration process, Journal of Surface Investigation, 9(6) (2015) 1293-1301.

DOI: 10.1134/s1027451015060348

Google Scholar

[16] S.N. Chebotarev, A.S. Pashchenko, A. Williamson, L.S. Lunin, V.A. Irkha, V.A. Gamidov, Ion beam crystallization of InAs/GaAs(001) nanostructures, Technical Physics Letters, 41(7) (2015) 661-664.

DOI: 10.1134/s1063785015070056

Google Scholar

[17] A.S. Pashchenko, S.N. Chebotarev, L.S. Lunin, Carrier transport in multilayer InAs/GaAs quantum dot heterostructures grown by ion beam crystallization, Inorganic Materials, 51 (3) (2015) 197-200.

DOI: 10.1134/s0020168515020144

Google Scholar

[18] V.N. Lozovski, S.N. Chebotarev, V.A. Irkha, G.V. Valov, Formation and use of positioning marks in scanning probe microscopy, Technical Physics Letters, 36(8) (2010) 737-738.

DOI: 10.1134/s1063785010080171

Google Scholar

[19] D.L. Alfimova, L.S. Lunin, M.L. Lunina, Influence of growth conditions on the surface quality and structural perfection of multicomponent heterostructures based on group A3B5 compounds, Journal of Surface Investigation, 8(3) (2014) 612-621.

DOI: 10.1134/s1027451014030021

Google Scholar

[20] S.N. Chebotarev, A.S. Paschenko, L.S. Lunin, V.A. Irkha, Features in the formation of Ge/Si multilayer nanostructures under ion-beam-assisted crystallization, Technical Physics Letters, 39(8) (2013) 726-729.

DOI: 10.1134/s1063785013080178

Google Scholar

[21] L.S. Lunin, S.N. Chebotarev, A.S. Pashchenko, Structure of Ge nanoclusters grown on Si(001) by ion beam crystallization, Inorganic Materials, 49(5) (2013) 435-438.

DOI: 10.1134/s0020168513050075

Google Scholar

[22] L.S. Lunin, S.N. Chebotarev, A.S. Pashchenko, S.A. Dudnikov, Correlation between the size and photoluminescence spectrum of quantum dots in InAs-QD/GaAs, Journal of Surface Investigation, 7(1) (2013) 36-40.

DOI: 10.1134/s1027451013010138

Google Scholar

[23] L.S. Lunin, I.A. Sysoev, M.D. Bavizhev, V.A. Lapin, D.S. Kuleshov, F.F. Malyavin, Dependence of the surface topology and raman scattering spectra of GexSi1-x/Si films on the composition variation over the layer thickness, Crystallography Reports, 58(3) (2013).

DOI: 10.1134/s1063774513030127

Google Scholar

[24] L.S. Lunin, S.N. Chebotarev, A.S. Pashchenko, L.N. Bolobanova, Ion beam deposition of photoactive nanolayers for silicon solar cells, Inorganic Materials, 48(5) (2012) 439-444.

DOI: 10.1134/s0020168512050111

Google Scholar

[25] L.S. Lunin, A.S. Pashchenko, Simulation and investigation of the GaAs and GaSb photovoltaic cell performance, Technical Physics, 56(9) (2011) 1291-1296.

DOI: 10.1134/s1063784211090118

Google Scholar

[26] L.S. Lunin, I.A. Sysoev, D.L. Alfimova, S.N. Chebotarev, A.S. Pashchenko, Photoluminescence of i-GaxIn1-xAs/n-GaAs heterostructures containing a random InAs quantum dot array, Inorganic Materials, 47(8) (2011) 816-818.

DOI: 10.1134/s0020168511080103

Google Scholar

[27] L.S. Lunin, I.A. Sysoev, D.L. Alfimova, S.N. Chebotarev, A.S. Pashchenko, A study of photosensitive InAs/GaAs heterostructures with quantum dots grown by ion-beam deposition, Journal of Surface Investigation, 5(3) (2011) 559-562.

DOI: 10.1134/s1027451011060127

Google Scholar

[28] L.S. Lunin, M.L. Lunina, A.A. Kravtsov, I.A. Sysoev, A.V. Blinov, Synthesis and study of thin TiO2 films doped with silver nanoparticles for the antireflection coatings and transparent contacts of photovoltaic converters, Semiconductors, 50(9) (2016).

DOI: 10.1134/s1063782616090141

Google Scholar

[29] D.L. Alfimova, L.S. Lunin, M.L. Lunina, A.S. Pashchenko, S.N. Chebotarev, Growth and properties of GaInPSbAs isoperiodic solid solutions on indium arsenide substrates, Physics of the Solid State, 58(9) (2016) 1751-1757.

DOI: 10.1134/s1063783416090055

Google Scholar

[30] S.N. Chebotarev, A.S. Pashchenko, V.A. Irkha, M.L. Lunina, Morphology and Optical Investigations of InAs-QD/GaAs Heterostructures Obtained by Ion-Beam Sputtering, Journal of Nanotechnology 2016, (2016) 5340218.

DOI: 10.1155/2016/5340218

Google Scholar

[31] D.L. Alfimova, L.S. Lunin, M.L. Lunina, Growth and properties of GayIn1-yPzAs1-x-zBix solid solutions on GaP substrates, Inorganic Materials, 50(2) (2014) 113-119.

DOI: 10.1134/s0020168514020010

Google Scholar

[32] D.L. Alfimova, L.S. Lunin, M.L. Lunina, Influence of growth conditions on the surface quality and structural perfection of multicomponent heterostructures based on group A3B5 compounds, Journal of Surface Investigation, 8(3) (2014) 612-621.

DOI: 10.1134/s1027451014030021

Google Scholar

[33] B.M. Sinel'Nikov, M.L. Lunina, GaxIn1-xBiyAszSb1-y-z/InSb and InBiyAszSb1-y-z/InSb heterostructures grown in a temperature gradient, Inorganic Materials, 48(9) (2012) 877-883.

DOI: 10.1134/s0020168512090154

Google Scholar

[34] V.V. Kuznetsov, E.A. Kognovitskaya, M.L. Lunina, E.R. Rubtsov, Bismuth in quaternary and quinary solid solutions based on A3B5 compounds, Russian Journal of Physical Chemistry A. 85(12) (2011) 2062-(2067).

DOI: 10.1134/s003602441112020x

Google Scholar